Allicdata Part #: | NTTFS4937NTAG-ND |
Manufacturer Part#: |
NTTFS4937NTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11A 8WDFN |
More Detail: | N-Channel 30V 11A (Ta), 75A (Tc) 860mW (Ta), 43.1W... |
DataSheet: | NTTFS4937NTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 860mW (Ta), 43.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2540pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTTFS4937NTAG, also known as a junction field effect transistor (JFET), is a type of field effect transistor which uses electrical charge to control the current between its source and drain leads. It was developed for use in transconductance amplifiers and other electrical components. This article will provide an overview of the application field and working principle of the NTTFS4937NTAG.
Applications of NTTFS4937NTAG
The NTTFS4937NTAG is primarily used to amplify signals. It is used in amplifiers and other signal processing circuits where its high frequency capabilities and low power consumption make it an excellent choice. Additionally, it is often used in frequency conversion and low-level signal generation.
The NTTFS4937NTAG is also used in high-speed communication systems and medical imaging systems. It provides excellent performance in applications such as pulse radio modulation, FM radio modulation, and gamma camera signal processing. Additionally, NTTFS4937NTAG is suitable for real-time signal analysis in radar systems due to its high speed and excellent signal-to-noise ratio.
Working Principle of NTTFS4937NTAG
The NTTFS4937NTAG is a three-terminal device with a source terminal, gate terminal, and drain terminal. It works by allowing an electric current to flow through a semiconductor channel between the source and drain terminal. This channel is created when the gate terminal is charged. The amount of electric current that is allowed to flow through the channel is controlled by the amount of charge applied to the gate terminal. The larger the charge, the more electric current can flow through the channel.
When the electric current flows through the channel of the NTTFS4937NTAG, it generates a voltage between the source and drain terminals. This voltage is known as the drain-to-source voltage. The amount of voltage generated depends on the amount of electric current that is flowing through the channel. If a large electric current is flowing through the channel, a large voltage is generated. If a small electric current is flowing through the channel, a small voltage is generated.
The NTTFS4937NTAG is a voltage-controlled device. This means that the voltage applied to the gate terminal is used to control the amount of electric current that is allowed to flow through the channel. A small voltage applied to the gate terminal will cause the electric current to decrease whereas a large voltage applied to the gate terminal will cause the electric current to increase.
Conclusion
The NTTFS4937NTAG is a versatile transistor device that can be used in a variety of applications. It is commonly used in amplifiers, signal processing circuits, and high-speed communication systems. In addition, it can be used in frequency conversion and medical imaging systems. The NTTFS4937NTAG is a voltage-controlled device that works by allowing an electric current to flow through a semiconductor channel between the source and drain terminals. The amount of electric current that is allowed to flow through the channel is controlled by the amount of charge applied to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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