NTTFS4985NFTAG Allicdata Electronics

NTTFS4985NFTAG Discrete Semiconductor Products

Allicdata Part #:

NTTFS4985NFTAGOSTR-ND

Manufacturer Part#:

NTTFS4985NFTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 16.3A 8-WDFN
More Detail: N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22....
DataSheet: NTTFS4985NFTAG datasheetNTTFS4985NFTAG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.47W (Ta), 22.73W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NTTFS4985NFTAG is a single P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component from ON Semiconductor, manufactured with their proprietary, super-junction technology. The device is suitable for both DC blocking and AC switching in a wide range of applications, including lighting, motor control, and power management.

The NTTFS4985NFTAG is an enhancement-mode field-effect transistor, where the width and length of the channel is effectively varied by the amount of applied voltage. The current conducted through the channel can be controlled with a relatively low gate-source voltage. This feature makes the device suitable for a variety of low-power switching methods, such as pulse-width modulation.

The MOSFET is constructed of a silicon substrate, consisting of two differently-doped regions to form a P-channel and an N-channel. Delicate gate insulation is formed by the gate oxide layer. An additional layer of silicon dioxide is formed on top of the gate, creating the gate to drain capacitance that is the main factor in determining the efficiency of the device.

The NTTFS4985NFTAG provides the lowest RDS on performance in its class, with an exceptionally low RDS (on) value of 1.7 KΩ @ 4.5 V and a low output capacitance of 1.9 pF. This makes the device an ideal choice for high power applications, such as switching mode power supplies and motor control applications.

The NTTFS4985NFTAG is also equally suited for AC switching applications. The device has a low switching-speed of 60 ns, making it ideal for high frequency applications such as switch-mode power supplies. The device can be easily paralleled, allowing it to handle higher power loads, and its very low output capacitance of 1.9 pF makes it well suited for high-speed switching.

Additionally, the NTTFS4985NFTAG offers a low gate-source threshold voltage of 1.2 V and a low gate charge of 4.12 nC, making it suitable for use in low-voltage applications. The device has a maximum avalanche voltage rating of 20 V, making it ideal for use in harsh automotive environment.

The NTTFS4985NFTAG is a single P-channel MOSFET that offers excellent performance in a variety of applications. It features a very low RDS (on) value and low output capacitance, making it ideal for high power and high frequency applications. Additionally, its low gate-source threshold voltage, low gate charge, and high avalanche voltage rating make it well suited for a variety of low-voltage and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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