NTTFS4985NFTAG Discrete Semiconductor Products |
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Allicdata Part #: | NTTFS4985NFTAGOSTR-ND |
Manufacturer Part#: |
NTTFS4985NFTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 16.3A 8-WDFN |
More Detail: | N-Channel 30V 16.3A (Ta), 64A (Tc) 1.47W (Ta), 22.... |
DataSheet: | NTTFS4985NFTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.47W (Ta), 22.73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2075pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.3A (Ta), 64A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NTTFS4985NFTAG is a single P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) component from ON Semiconductor, manufactured with their proprietary, super-junction technology. The device is suitable for both DC blocking and AC switching in a wide range of applications, including lighting, motor control, and power management.
The NTTFS4985NFTAG is an enhancement-mode field-effect transistor, where the width and length of the channel is effectively varied by the amount of applied voltage. The current conducted through the channel can be controlled with a relatively low gate-source voltage. This feature makes the device suitable for a variety of low-power switching methods, such as pulse-width modulation.
The MOSFET is constructed of a silicon substrate, consisting of two differently-doped regions to form a P-channel and an N-channel. Delicate gate insulation is formed by the gate oxide layer. An additional layer of silicon dioxide is formed on top of the gate, creating the gate to drain capacitance that is the main factor in determining the efficiency of the device.
The NTTFS4985NFTAG provides the lowest RDS on performance in its class, with an exceptionally low RDS (on) value of 1.7 KΩ @ 4.5 V and a low output capacitance of 1.9 pF. This makes the device an ideal choice for high power applications, such as switching mode power supplies and motor control applications.
The NTTFS4985NFTAG is also equally suited for AC switching applications. The device has a low switching-speed of 60 ns, making it ideal for high frequency applications such as switch-mode power supplies. The device can be easily paralleled, allowing it to handle higher power loads, and its very low output capacitance of 1.9 pF makes it well suited for high-speed switching.
Additionally, the NTTFS4985NFTAG offers a low gate-source threshold voltage of 1.2 V and a low gate charge of 4.12 nC, making it suitable for use in low-voltage applications. The device has a maximum avalanche voltage rating of 20 V, making it ideal for use in harsh automotive environment.
The NTTFS4985NFTAG is a single P-channel MOSFET that offers excellent performance in a variety of applications. It features a very low RDS (on) value and low output capacitance, making it ideal for high power and high frequency applications. Additionally, its low gate-source threshold voltage, low gate charge, and high avalanche voltage rating make it well suited for a variety of low-voltage and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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