![NTTFS4C58NTWG Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTTFS4C58NTWG-ND |
Manufacturer Part#: |
NTTFS4C58NTWG |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 48A U8FL |
More Detail: | MOSFET N-CH 30V 48A U8FL |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.27346 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
Description
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NTTFS4C58NTWG is a three-terminal negative-channel enhancement-mode field effect transistor (FET) that is used primarily for signal amplification and voltage regulation. It is a single transistor having an insulated gate (IGFET) structure, making it suitable for high-voltage applications.The NTTFS4C58NTWG is a type of insulated-gate FET with a single-sided gate, making it ideal for use in high-voltage environments. The FET\'s single-sided gate makes it better able to withstand voltage and current fluctuation without breakdown. It also allows the NTTFS4C58NTWG to function at higher frequencies than many conventional field-effect transistors.The NTTFS4C58NTWG is suitable for use in a wide range of applications, including analog and digital signal amplification, voltage regulation, and high-voltage switching. It is also suitable for use in audio and video amplifiers, power management circuits, and on-board electric vehicles.The NTTFS4C58NTWG has several advantages over other FETs. For one, it has an exceptionally low on-resistance, making it suitable for use in high-current applications. Its low input and output capacitance also make it suitable for high-speed applications. It also has a high breakdown voltage, making it suitable for high-voltage applications.The NTTFS4C58NTWG works on a simple principle. When a small voltage is applied to the gate, the transistor switches on, allowing current to pass through the channel. As the voltage increases, so does the current. The current is controlled by the size of the voltage applied to the gate, with a higher voltage causing a greater current.The NTTFS4C58NTWG is a convenient and versatile FET for a range of applications. Its low on-resistance, low input/output capacitance, and high breakdown voltage make it suitable for high-voltage, high-current, and high-frequency applications. And its single-sided gate makes it an ideal choice for use in high-voltage environments.
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