NVMFD5875NLT1G Allicdata Electronics
Allicdata Part #:

NVMFD5875NLT1GOSTR-ND

Manufacturer Part#:

NVMFD5875NLT1G

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 60V 7A SO8FL
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 7A 3.2W Surfac...
DataSheet: NVMFD5875NLT1G datasheetNVMFD5875NLT1G Datasheet/PDF
Quantity: 1000
1500 +: $ 0.30973
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description

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The NVMFD5875NLT1G is a power transistor array from ON Semiconductor that features an integrated, high-voltage and high current driver for use in a wide variety of applications. It is a low on-resistance and low voltage drop device with a very robust construction enabling it to be used in a wide range of power applications. This power transistor array is available in a quad flat no-lead (QFN) package that, in addition to its low on-resistance and low voltage drop characteristics, provides excellent thermal performance.

The NVMFD5875NLT1G array consists of four identical N-channel MOSFETs in a monolithic configuration. It has an operating current range of -10mA to 8A and an operating temperature range of -55°C to 175°C. It is designed for use in a variety of power applications, such as DC/DC converters, switching power supplies, audio power amplifiers and motor drivers.

The NVMFD5875NLT1G array features a driver circuit which can be controlled using a single PWM signal. Its integrated driver includes features such as pulse skipping, low latency, protection from false triggering and soft-start. This device also features an over-temperature protection function, in order to protect the device from operating at unsafe temperatures. It is available in a wide-body MSOP-10 package.

The working principle of the NVMFD5875NLT1G array is that it is able to switch large amounts of power across its X and Y terminals in order to provide controlled power to a variety of applications. This array is designed to provide an efficient means of controlling the power flow to a given load. The gate of each of the N-channel MOSFETs is controlled via the integrated driver circuit and the input signal. The device is able to switch on and off by simply varying the width of the pulse applied to the input.

The NVMFD5875NLT1G array is suitable for use in a variety of power applications, including DC-DC converters, switching power supplies, audio power amplifiers, motor drivers, temperature control circuits and high-current applications. Additionally, the integrated driver circuitry and over-temperature protection functions make this device well-suited for any high-power applications where precise control and protection are required. In addition to its practical applications, it is also available at a competitive price.

The specific data is subject to PDF, and the above content is for reference

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