Allicdata Part #: | NVMFS5C442NLT1G-ND |
Manufacturer Part#: |
NVMFS5C442NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 27A SO8FL |
More Detail: | N-Channel 40V 27A (Ta), 127A (Tc) 3.7W (Ta), 83W (... |
DataSheet: | NVMFS5C442NLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 127A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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Application Field of NVMFS5C442NLT1G
The NVMFS5C442NLT1G is suitable for a wide range of applications, including as a boost MOSFET, a level shifter, a high voltage pair switch, motor control, and an audio amplifier. These applications require either low current, low voltage, a short rise time, or a low gate charge, features found in the NVMFS5C442NLT1G. It can even operate in high temperature environments which are often found in industrial settings, making this MOSFET an ideal choice for a wide range of applications.
Working Principle of NVMFS5C442NLT1G
The NVMFS5C442NLT1G is a silicon-based N-channel MOSFET made with depletion-mode technology. This device has an inherently high output impedance, meaning it can’t provide high transient current, but can still be used to drive low impedance loads. The device can easily switch on and off, as its Gate signal will turn the power MOSFET on and off. When the signal reaches the threshold value, which is typically from +1.3 to +3.3V, the power MOSFET will turn on and start to supply a certain current.
The Drain of the power MOSFET comes into contact with the external power supply, and the Source is connected to the load. When the Gate voltage is low, the power MOSFET is off, meaning that no current can flow into the load. Once the gate voltage is increased, the power MOSFET turns on and current flows through it, depending on the voltage and resistance provided by the external circuit. When the gate voltage reaches the threshold, the current level increases and the power MOSFET starts to provide power to the load. When the gate voltage decreases and reaches the off level, the power MOSFET turns off and the current stops flowing.
The NVMFS5C442NLT1G has the advantage of being able to switch off and on quickly, meaning it can be used in high-speed applications such as switching regulators or motor speed control. Its high input impedance also allows it to be used as a buffer in a variety of applications when a low on resistance is required. This makes it a great choice for high voltage applications, where the device can be used to switch power on and off quickly and reliably.
Conclusion
The NVMFS5C442NLT1G is a N-Channel MOSFET device, designed with depletion-mode technology to provide high input impedance, low output impedance, and low on resistance. This makes it suitable for use in a wide range of applications, such as switch regulators, motor speed controllers, audio amplifiers, and boost MOSFETs. Its fast switching times also make it ideal for high-speed applications, where it can be used to quickly and reliably switch power on and off.
The specific data is subject to PDF, and the above content is for reference
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