Allicdata Part #: | NVMFS5C604NLT3G-ND |
Manufacturer Part#: |
NVMFS5C604NLT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 40A SO8FL |
More Detail: | N-Channel 60V 40A (Ta), 287A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C604NLT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta), 287A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C604NLT3G is a type of discrete transistor technology belonging to the category of Field-Effect Transistors (FETs). It is a Single FET with a Dual-FLAT no lead (DFN) surface-mount package. The component is fifth-generation semiconductor technology from STMicroelectronics, which has provided reliable and highly efficient transistors since the 1970s.
The NVMFS5C604NLT3G is designed to solve several problems related to high-current power switches and linear power conversion. It is a low-voltage component with a total on resistance of 1.7 ohms and a breakdown voltage rating of 4.5 volts. It is typically used in a half-bridge configuration to facilitate power-switching designs, or in an asymmetric one-for-one configuration to optimize linear topologies.
The NVMFS5C604NLT3G operates using two distinct principles: voltage-controlled conduction and gate-controlled conduction. The first principle is the same as any FET; when a voltage is applied between the gate and source terminals, electrons are drawn to the gate region and the path between the drain and source is turned on. This is referred to as voltage-controlled conduction.
Gate-controlled conduction is when an electric current is used to control the gate voltage. When a current is applied to the gate region, the voltage between the gate and the source is increased, thus increasing the current flow between the drain and the source. By controlling the gate current, the NVMFS5C604NLT3G can enable greater power conversion efficiency.
By combining voltage-controlled conduction and gate-controlled conduction, the NVMFS5C604NLT3G is able to provide efficient and reliable power switching at very low voltages. This makes it ideal for use in audio, video, and automotive applications where high-current switching is required while minimizing the power loss due to voltage drops.
The NVMFS5C604NLT3G is also a popular choice for voltage-mode switching and other applications where dynamic modulation of the signal path is necessary. Its high-speed switching makes it well-suited for signal-level switching, such as between half-bridge configurations. This feature also allows for greater signal flexibility, as the transition speed can be adjusted as needed per application. In addition, the NVMFS5C604NLT3G’s low-power characteristics make it an ideal candidate for a wide range of linear voltage regulator applications.
In summary, the NVMFS5C604NLT3G is a high-performance, single FET designed for high-current power-switching applications and linear power regulation. It is capable of delivering efficient and reliable switching performance in low-voltage settings while providing dynamic signal-level modulation when needed. This makes it a popular choice for applications in audio, video, automotive, and voltage-mode switching environments.
The specific data is subject to PDF, and the above content is for reference
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