Allicdata Part #: | NVMFS5834NLT3G-ND |
Manufacturer Part#: |
NVMFS5834NLT3G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 75A SO8FL |
More Detail: | N-Channel 40V 14A (Ta), 75A (Tc) 3.6W (Ta), 107W (... |
DataSheet: | NVMFS5834NLT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.22721 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1231pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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NVMFS5834NLT3G is a transistor from ON Semiconductor which is a type of Field Effect Transistor, or FET. FETs are semiconductor devices which are similar to transistors, but function differently and are made from different materials. Although there are a number of different types of FETs, such as JFETs and MOSFETs, the NVMFS5834NLT3G is a MOSFET, or metal-oxide-semiconductor FET. MOSFETs are the most commonly used type of FET due to their low power consumption and high switching speeds.
Due to their metal-oxide-semiconductor architecture, MOSFETs are highly used in digital circuits and are especially effective in low-voltage and low-power applications. The NVMFS5834NLT3G MOSFET features ON Semiconductor’s SuperFET process which is designed to deliver high performance with low power consumption. It is well-suited to use in many types of circuits, including audio amplifiers, current levels, voltage control and high-resolution control applications.
The NVMFS5834NLT3G has many features which make it suitable for a wide range of applications. It has an adjustable gate voltage, which allows its output voltage to be controlled, and its high switching speed makes it an ideal choice for circuits running at high frequencies. It also has excellent protection from electrostatic discharge, meaning that it is more resistant to damage from electrostatic shock. The NVMFS5834NLT3G is also highly efficient, with a low-on-resistance gate for improved performance and power savings.
In addition to its features, the NVMFS5834NLT3G also has a very straightforward working principle. Like all FETs, it operates on the principle of majority carrier injection. This means that when a charge is applied to its gate, the FET will allow current to flow through it, depending on the voltage applied. When the gate voltage is increased, the FET will allow more current to flow, while when the voltage is reduced, the FET will reduce the amount of current that it permits. This is known as ‘gate control’ and this is what allows the NVMFS5834NLT3G to be used for voltage and current control in various circuits.
The NVMFS5834NLT3G is an excellent choice for circuits requiring precise control of current and voltage levels, due to its high switching speeds and low power consumption. Additionally, its adjustable gate voltage and protection from electrostatic discharge make it ideally suited for many applications. As a result, the NVMFS5834NLT3G is a great option for circuit builders looking for a reliable and versatile FET for their designs.
The specific data is subject to PDF, and the above content is for reference
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