NVMFS5C442NLWFT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C442NLWFT1G-ND

Manufacturer Part#:

NVMFS5C442NLWFT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 27A SO8FL
More Detail: N-Channel 40V 27A (Ta), 127A (Tc) 3.7W (Ta), 83W (...
DataSheet: NVMFS5C442NLWFT1G datasheetNVMFS5C442NLWFT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 127A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The NVMFS5C442NLWFT1G field-effect transistor (FET) is a single voltage state MOSFET (metal-oxide-semiconductor FET) fabricated on the nano-scale. The device is designed to provide efficient, low-voltage operation in a wide variety of applications, for example in low and medium voltage power supplies, motor drives, and automotive powertrain systems. The device has an operating voltage range of 12-20V and a gate-source breakdown voltage of up to 20V.

A MOSFET is a voltage-controlled, bilateral switch with an extremely high input impedance, making it ideal for numerous switching and amplification applications. The NVMFS5C442NLWFT1G is an N-channel MOSFET device, meaning it switches an N-type conductive channel between the source and the drain when the gate voltage is greater than the threshold voltage, thus allowing current to flow from the source to the drain.

The NVMFS5C442NLWFT1G has a maximum current rating of 5A, a package type of PowerPAK® SO-8, and a single on-state resistance of 2.6mΩ. The device also has a high gate-source capacitance of 4.5nF, and a total gate charge of 3.9nC. These characteristics make the NVMFS5C442NLWFT1G an ideal choice for high-efficiency power conversion circuits, motor control, and other applications where low on-state resistance and low gate-to-source capacitance are important.

The NVMFS5C442NLWFT1G has a fast switching time, making it suitable for applications where high-speed switching is required. Its low forward voltage drop also reduces power dissipation, increasing efficiency in power conversion applications. The device is also available in a variety of package types, including the PowerPAK® SO-8.

The NVMFS5C442NLWFT1G is an ideal choice for a variety of applications, including low- and medium-voltage power supplies, motor drives, and automotive powertrain systems. The device\'s low on-state resistance, low gate-to-source capacitance, and fast switching time make it an excellent choice for efficient power conversion circuits, motor control, and other high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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