NVMFS5C646NLWFT1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 79W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2164pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	33.7nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta), 93A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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NVMFS5C646NLWFT1G is a highly reliable, high efficiency, low power dual N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The device is designed for a wide range of applications including dc power supplies, high-fidelity audio amplifiers, and high voltage SMPS applications.In the NVMFS5C646NLWFT1G, both the drain and source are connected to the NMOS transistor\'s gate. This connection ensures that the device will not be affected by the gate\'s capacitance and is ideal for high frequency switching applications. The device also has a low on resistance, providing excellent efficiency when used with a wide range of current levels.NVMFS5C646NLWFT1G is commonly used in a wide variety of applications due to its wide range of operation and low power consumption. It is well suited for use in dc-to-dc converters, power supplies, audio amplifiers, and high voltage SMPS applications.The NVMFS5C646NLWFT1G works on the principle of voltage controlled conductance. When an appropriate voltage is applied to the gate of the transistor, a current will flow from the drain to the source. This current flow is partially conducted by the drain-source channel but is also partially blocked by the gate-channel junction. The higher the gate voltage, the more current that is allowed to flow through the drain and source channels.The NVMFS5C646NLWFT1G has a higher tolerance for a wider range of voltages and currents. This makes it an ideal choice for applications that require precise voltage and current control, as well as low power consumption. Its wide range of operation makes it a perfect choice for switching applications, as well as providing consistent performance in dc-to-dc converters and other applications.The NVMFS5C646NLWFT1G is a reliable, high efficiency, low power dual N-channel MOSFET. It is used in a variety of applications, including dc-to-dc converters, power supplies, audio amplifiers, and high voltage SMPS applications. It works on the principle of voltage controlled conductance, allowing precise control over the current flow through the drain-source channel. Its wide range of voltage and current tolerance make it an ideal choice for applications that require precise control and low power consumption.

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