Allicdata Part #: | NVMFS4C03NWFT3G-ND |
Manufacturer Part#: |
NVMFS4C03NWFT3G |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 31.4A SO8FL |
More Detail: | N-Channel 30V 31.4A (Ta), 143A (Tc) 3.71W (Ta), 77... |
DataSheet: | NVMFS4C03NWFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.23855 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.71W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3071pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31.4A (Ta), 143A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS4C03NWFT3G is a single type MOSFET which belongs to the field of transistors. MOSFETs are insulated gate transistors that are used for switching and amplifiying electronic signals. In this article, we will discuss about the application field and working principle of NVMFS4C03NWFT3G.
Application Field of NVMFS4C03NWFT3G
NVMFS4C03NWFT3G is a highly efficient device and can be used in a wide range of applications. One of the primary applications of this device is power management. This MOSFET is ideally suited for applications that require high current switching and low on-state resistance. This device provides excellent RDS(on) performance and can be used in various power management circuits, such as buck converters, flyback converters, synchronous rectifiers, and so on. NVMFS4C03NWFT3G also has several applications in audio circuits, motor control systems, robotics, automotive systems, and other consumer applications.
Working Principle of NVMFS4C03NWFT3G
NVMFS4C03NWFT3G is a power MOSFET transistor that consists of four terminals: drain, source, gate, and body. NVMFS4C03NWFT3G operates on the principle of field effect. When a positive voltage is applied between the gate and source of the device, it forms an electric field. This electric field induces a charge carrier in the body of the device, which further results in the formation of a channel between the drain and source. Due to this channel formation, current flow between the drain and source is enabled. The result is that the voltage drop between drain and source can be controlled by adjusting the voltage between the gate and source.
The NVMFS4C03NWFT3G has a very low RDS(on) value of 10 mOhms, which makes it ideal for applications that require high current switching. In addition, it also has a very low gate voltage requirement which makes it suitable for low voltage applications. The device is also capable of handling high voltage and power – up to 180V and 100W.
Conclusion
NVMFS4C03NWFT3G is a single type MOSFET transistor that belongs to the field of transistors. It is ideally suited for power management applications, such as buck converters, flyback converters, synchronous rectifiers, and so on. This device also has several applications in audio circuits, motor control systems, robotics, automotive systems, and other consumer applications. NVMFS4C03NWFT3G operates on the principle of field effect and allows current to flow between the drain and source when a positive voltage is applied between the gate and source of the device. The device is capable of handling high voltage and power – up to 180V and 100W. NVMFS4C03NWFT3G also has a low RDS(on) value of 10 mOhms and a low gate voltage requirement which makes it suitable for low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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