NVMFS5C673NLAFT1G

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NVMFS5C673NLAFT1G is an advanced FET type device manufactured with high-k dielectric and the advanced silicon-on-insulator (SOI) technology. The NVMFS5C673NLAFT1G offers ultra-low “on” resistance, making it a perfect choice for applications that require ultra-low power consumption and low-power switching. It is ideal for use in high-frequency applications, including switches, power converters, power amplifiers and communication circuits.

The NVMFS5C673NLAFT1G is a single N-channel MOSFET device with an advanced low-voltage SOI technology. It has a threshold voltage of 3V and a drain-source breakdown voltage of 11V. It provides ultra-low leakage current when it is in the off-state and offers high switching performance, high noise immunity, and fast switching speeds. It also has excellent dynamic characteristics such as small gate charge and low gate-source capacitance.

The device is well suited for DC-DC converter, switching regulator, POL converter, power MOSFET, RF amplifiers, RF switches and telecom circuits. It is available in several package options, such as SOP, SOIC and DPAK, so it can be easily integrated into various systems. The device is designed to operate in temperatures ranging from -25°C to 85°C.

The NVMFS5C673NLAFT1G has two main operating modes: linear and saturated. In linear mode, the device behaves like a resistor, allowing the voltage to drop linearly when the gate voltage is applied. In saturated mode, current flows through the device regardless how hard the gate is driven. The device is optimized for fast switching and ultra-low resistance.

The NVMFS5C673NLAFT1G offers superior performance compared to other devices in its class. It has an on-resistance of 4.3 mΩ and an off state leakage current of 2nA. In addition, it offers low RDS(ON) variation for accurate gain control. The device also has an input capacitance of only 5pF, making it ideal for high-frequency applications.

In conclusion, the NVMFS5C673NLAFT1G is a unique FET type device offering superior performance for high-frequency applications. It offers ultra-low “on” resistance and excellent dynamic characteristics, making it the perfect choice for low-power switching and high-frequency applications. It is available in several package options and operates in temperatures ranging from -25°C to 85°C.

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