Allicdata Part #: | NVMFS5C612NLT1G-ND |
Manufacturer Part#: |
NVMFS5C612NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 36A SO8FL |
More Detail: | N-Channel 60V 36A (Ta), 235A (Tc) 3.8W (Ta), 167W ... |
DataSheet: | NVMFS5C612NLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6660pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 235A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C612NLT1G is a power MOSFET that belongs to the family of field effect transistors (FETs) known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). MOSFETs are the most commonly used type of FET. This particular MOSFET is a single channel, enhancement mode device, with n-channel type. It is designed for use in high current, low voltage applications.
The NVMFS5C612NLT1G is an ideal choice for applications such as DC/DC converters, power management systems, power sources, audio power amplifiers, and DC motor drives. Its low-threshold voltage allows it to be used in controlled-speed DC motor drives and PWM controllers, making it particularly suitable for automotive applications. Thanks to its fast switching speed and low gate-to-source capacitance, it can handle relatively high current pulses, thus delivering improved efficiency and reliability in high-speed switching applications.
The NVMFS5C612NLT1G is extremely versatile, easy to use and offers excellent performance. In addition to its low parasitic capacitance, its low threshold voltage, combined with a low output capacitance, delivers high-speed switching with fast rise and fall times. This results in improved system efficiency in audio power amplifiers when used in combination with good thermal design.
The basic working principle behind the NVMFS5C612NLT1G is that it uses the Metal Oxide Semiconductor (MOS) structure. It works on the principle that when a voltage is applied across the terminals of the transistor, the current flow is regulated in proportion to the applied voltage. In this way, it is used to control the flow of current between the source and drain terminals. As the voltage applied across the terminals of the transistor increases, the current also increases, and vice versa. This makes it extremely efficient, allowing it to achieve high current levels with minimal power consumption.
The NVMFS5C612NLT1G is a great choice for use in high-current, low-voltage applications. Its low gate-to-source capacitance and low threshold voltage make it particularly suitable for use in high-speed switching applications, allowing for improved system efficiency and reliability. It also offers excellent performance in audio power amplifiers, making it an ideal choice for automobile applications. With its fast switching speed, low parasitic capacitance, and high current pulses delivered, the NVMFS5C612NLT1G offers a great solution for use in many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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