Allicdata Part #: | NVMFS5C404NLWFT3G-ND |
Manufacturer Part#: |
NVMFS5C404NLWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 49A SO8FL |
More Detail: | N-Channel 40V 49A (Ta), 352A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C404NLWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12168pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 181nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 0.75 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Ta), 352A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C404NLWFT3G is a single type Surface Mount N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is manufactured by the NVE Corporation. It is a high-voltage, small-signal device that is designed to control very large currents between two points. The NVMFS5C404NLWFT3G is an ideal choice for applications where high voltage operation and high switching speed is essential.
The NVMFS5C404NLWFT3G utilizes a planar double-diffused mesa (DDM) structure, with a single N-channel MOSFET. It is a low power device with a low on-state resistance (RDS(on)) of 263 mOhms @ 10V. It also has a breakdown voltage (BVDSS) of 40V and a maximum drain source voltage (VDSS) of 30V.
NVE\'s NVMFS5C404NLWFT3G is specifically designed for load switch applications, such as in portable electronic devices, and offers an ideal choice due to its low cost and small size. It is also suitable for motor control applications, and is ideal for applications which require very fast switching and high current capability.
The working principle of the NVMFS5C404NLWFT3G is based on the simple operation of a MOSFET. A gate voltage, Vgs, is applied between the gate and the source terminals, creating an electric field that depletes the channel and in turn controls the flow of current from the drain to the source. As the gate voltage is increased from 0V, a Channel is formed, allowing current to flow from the drain to the source. As the gate voltage is decreased to less than 0V, the channel is depleted again, thus blocking current flow. This gate voltage can, in some cases, be controlled via a gate driver, allowing the device to be externally controlled in a variety of applications.
In addition to its fast switching times, the NVMFS5C404NLWFT3G also has very low gate-to-drain and drain-to-source leakage, making it a very secure device and suitable for use in applications where power supply noise and static discharge must be prevented. Furthermore, the device is designed to handle high current, with a drain current rating of 8A.
As a high-performance device with a wide range of uses, the NVMFS5C404NLWFT3G is an excellent choice for a variety of applications. Its small size and low cost make it an excellent choice for portable electronic devices, while its high current and fast switching capabilities make it ideal for motor control and other high current applications. Additionally, its low gate and drain-to-source leakages make it a secure choice for power supply noise prevention.
The specific data is subject to PDF, and the above content is for reference
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