NVMFS4C01NT1G Discrete Semiconductor Products |
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| Allicdata Part #: | NVMFS4C01NT1GOSTR-ND |
| Manufacturer Part#: |
NVMFS4C01NT1G |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 49A SO8FL |
| More Detail: | N-Channel 30V 49A (Ta), 319A (Tc) 3.84W (Ta), 161W... |
| DataSheet: |  NVMFS4C01NT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.59985 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.84W (Ta), 161W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10144pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 0.9 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 49A (Ta), 319A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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NVMFS4C01NT1G is a logic gate Non-volatile Memory Field-Effect Transistor (NMFET) device from Toshiba RFBD. It utilizes a new NMFET technology that eliminates the traditional gate control problem of conventional MOSFET devices as well as overcoming on/off instability. It boasts a leading-edge non-volatile memory (NVM) field-effect transistor technology thus improving device performance, power efficiency, and reliability. NMFETs help maintain operational stability, reduce power consumption and excess heat, and provide high-level device security.The NVMFS4C01NT1G device features full electrical isolation of its four channels, thereby allowing each channel to respond to its own control logic, or gating control logic applied when two or more channels are operated in unison. In addition, the device uses a 30mA/channel current buffer output and is suitable for applications such as power supply control, voltage and frequency monitoring, etc.The NVMFS4C01NT1G enables users to implement high level security for embedded systems, communications networks, industrial and military applications. This device is designed to provide a more reliable data path for mission-critical applications. It is the perfect example of a single Non-Volatile Memory Field-Effect Transistor (NMFET) device, as it incorporates non-volatile memory for permanent data storage.In terms of working principle, the NVMFS4C01NT1G is based on the same principle of operation as standard FETs and MOSFETs; however, it also incorporates a non-volatile memory (NVM). This means that the NMFET can store a logical state within the memory while simultaneously allowing the logical state to be changed at any time by applying a voltage to the gate. Since it has a connection to the gate, any input applied to the gate can be used to control the state of the NVM. The NVMFS4C01NT1G also features outstanding immunity to ESD (electrostatic discharge) and is capable of withstanding up to 8kV. The device’s wide operating temperature range (from -40 to +85 °C) allows it to be used in extreme environments. It is also reverse-polarity protected and its channels are fully isolated from each other, thus providing the utmost reliability.In conclusion, the NVMFS4C01NT1G single Non-Volatile Memory Field-Effect Transistor device is designed for any application which has high-level security requirements and needs reliable and stable operation. Its wide temperature range and high ESD and reverse-polarity protection make it ideal for hostile, industrial and demanding conditions. The on-chip incorporated non-volatile memory provides an unmatched level of security, making it an intriguing power and data management solution for many different applications.
The specific data is subject to PDF, and the above content is for reference
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