NVMFS5C673NLWFAFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C673NLWFAFT3G-ND

Manufacturer Part#:

NVMFS5C673NLWFAFT3G

Price: $ 0.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CHANNEL 60V 50A 5DFN
More Detail: N-Channel 60V 50A (Tc) 46W (Tc) Surface Mount 5-DF...
DataSheet: NVMFS5C673NLWFAFT3G datasheetNVMFS5C673NLWFAFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.21156
Stock 1000Can Ship Immediately
$ 0.23
Specifications
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101
Vgs(th) (Max) @ Id: 2V @ 35µA
Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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NVMFS5C673NLWFAFT3G is a single field-effect transistor (FET) commonly used in switches, amplifiers, and circuit boards. FETs are electronic devices that use an electric field to control the current flow between two terminals. FETs are usually either N-type (conducting, but with a positive voltage requirement) or P-type (non-conducting, but with a negative voltage requirement). The NVMFS5C673NLWFAFT3G is a single N-type metal–oxide–semiconductor FET (MOSFET).

A MOSFET is a voltage-controlled device in which an insulated metal gate controls the current flow. It is an efficient semiconductor light switch and can be used as a high-speed switching device. Due to its low gate-to-channel capacitance, the NVMFS5C673NLWFAFT3G is suitable for high-frequency and high-power applications. It is also suitable for low-power and low-noise applications because of its low input capacitance.

The NVMFS5C673NLWFAFT3G consists of an N-channel MOSFET. It consists of an insulated gate and two terminals, one for the drain and one for the source. When the gate is charged, it creates a field within the MOSFET and attracts electrons from the source and moves them to the drain. This current flow can be controlled by the voltage applied to the gate. As the voltage applied to the gate is increased, the current flow increases, and vice versa.

The NVMFS5C673NLWFAFT3G is suitable for various applications, including switching, amplifiers, and circuit boards. It is commonly used in switching and amplifier applications due to its high-speed switching capability. It can also be used in circuit boards as a low-power and low-noise device. Its low capacitance makes it suitable for high-frequency applications. Additionally, its high-frequency operation makes it an ideal choice for switching applications.

The NVMFS5C673NLWFAFT3G is a versatile device and can be used in a variety of applications. It offers high-speed switching, low-noise operation, and low power dissipation in a compact package. It is an ideal solution for switching, amplifier, and circuit board applications. Its low-noise operation and small size make it ideal for use in high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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