Allicdata Part #: | NVMFS5C677NLWFT1G-ND |
Manufacturer Part#: |
NVMFS5C677NLWFT1G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | T6 60V S08FL SINGLE |
More Detail: | N-Channel 60V 11A (Ta), 36A (Tc) 3.5W (Ta), 37W (T... |
DataSheet: | NVMFS5C677NLWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.22106 |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 2V @ 25µA |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 36A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The NVMFS5C677NLWFT1G is a type of single Large Can field effect transistor (FET). It is categorized in its power range and is designed to handle high power, avalanche and high-speed applications.
This FET is used in controlled switching power supplies and electric vehicle systems. It is also particularly suitable for high frequency and high voltage applications due to its low gate charge and high gate resistance.
The NVMFS5C677NLWFT1G is a highly efficient, low-voltage point contact transistor. It provides good efficiency, simple design and high speed in a range of devices.
This FET is well-suited to applications requiring high-speed switching of current in a circuit and comes with a low on-resistance, high efficiency and improved switching capabilities.
The switching characteristics of the NVMFS5C677NLWFT1G can be described as fast and linear, making this type of FET suitable for highly dynamic applications. It works on the principle of electric charge control, allowing a small electric current to control a large electric current.
A MOSFET circuit is formed when the gate of the FET is connected to a positive voltage on the drain and a negative voltage on the source. When the gate voltage is high, the MOSFET is activated and a positive voltage is allowed to flow through the resistor on the drain.
When the gate voltage is low, the MOSFET is turned off, preventing current from flowing. This behaviour makes MOSFETs ideal for switching power in various applications, such as motor control, switching the output of a circuit, speed control, and so on.
The NVMFS5C677NLWFT1G can also be used for high voltage applications due to its low on-resistance, which makes it suitable for applications that require voltage boost and current limit. Its low gate-source capacitance, low gate-drain capacitance and low gate-threshold voltage also make it an ideal choice for high frequency applications.
In addition, the NVMFS5C677NLWFT1G has extremely low on resistance, meaning that it can handle large amounts of load current and voltage, making it suitable for PFC, lighting and automotive applications.
It is also suitable for high-power applications due to its high avalanche energy rating, which enables it to handle large currents over a short time. The NVMFS5C677NLWFT1G can also handle high peak-to-peak power in DC-DC converters, making it a popular choice for high-reliability applications.
The high speed and linear switching characteristics of the NVMFS5C677NLWFT1G makes it an ideal solution for high frequency applications, such as communication receivers and converters. By using the NVMFS5C677NLWFT1G, designers can achieve superior system performance.
Overall, the NVMFS5C677NLWFT1G has a wide variety of uses. It is designed to be used in applications requiring fast switching, high efficiency and low voltage. Its low on-resistance, high efficiency and improved switching capabilities make it a popular choice for those looking to maximize power performance.
The specific data is subject to PDF, and the above content is for reference
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