Allicdata Part #: | NVMFS4C03NT3G-ND |
Manufacturer Part#: |
NVMFS4C03NT3G |
Price: | $ 0.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 31.4A SO8FL |
More Detail: | N-Channel 30V 31.4A (Ta), 143A (Tc) 3.71W (Ta), 77... |
DataSheet: | NVMFS4C03NT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.21361 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.71W (Ta), 77W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3071pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31.4A (Ta), 143A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS4C03NT3G is a type of field effect transistor (FET). It is a metal oxide semiconductor field effect transistor (MOSFET) made from a single type of material. As a single FET, NVMFS4C03NT3G does not have multiple elements that combine to make up the transistor.
The NVMFS4C03NT3G’s primary application is amplifying or switching. It can be used as an amplifier, a voltage regulator, an electrical switch, or a power amplifier. The device can also be used as a current or voltage driver in logic circuits. As a voltage regulator, NVMFS4C03NT3G can be used in both switching power supplies and linear power supplies.
When using NVMFS4C03NT3G as an amplifier or switch, the device operates based on a positive voltage change applied to the gate terminal. An input voltage is then applied to the device’s drain terminal. The output current is then changed as the given voltage at the gate is changed. As the gate voltage decreases, the drain current also decreases. When the input voltage is removed from the gate terminal, the drain current zero, allowing the device to function as an electrical switch.
In order for NVMFS4C03NT3G to maintain a consistent output current, a bias voltage must be applied to the gate terminal to keep the drain current in a “static” state, which means the output current will remain the same until the gate voltage is changed. The magnitude of the bias voltage is determined by the type of load, the resistance between the source and the drain, and the specified voltage ahead of the device. To ensure efficient, high-performance operation, the device must also be supplied with a specific signal at the gate, which varies depending on the specific requirements of the application.
In order for NVMFS4C03NT3G to remain thermally stable and work properly, an adequate amount of heat sinking must be provided. Any external heat generated by the device should either be dissipated to the surrounding area or conducted away with a reasonable amount of thermal resistance. The device must also be adequately decoupled to reduce any noise and power supply fluctuations.
NVMFS4C03NT3G is a powerful, reliable and robust device that can be used in multiple applications, including amplifiers or switches. It requires a certain amount of heat sinking to ensure reliable operation, and can also be used in linear power supplies as a voltage regulator as well as in logic circuits as a current or voltage driver. The device’s primary function is amplifying or switching, and its output current can be changed as the gate voltage is altered. By applying the necessary bias voltage, the device can be maintained in a static state in order to ensure efficient, high-performance operation.
The specific data is subject to PDF, and the above content is for reference
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