NVMFS5C410NLT1G

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8862pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	143nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	0.9 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	48A (Ta), 315A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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<p>The NVMFS5C410NL 1T1G is a discrete low-voltage, low power field effect transistor (FET) for use in applications that require a high degree of accuracy, reliability and isolation. The device is manufactured and marketed by ON Semiconductor. It is a general purpose transistor suitable for use in a wide range of demanding applications, including RF and communications, automotive, test and measurement, and industrial.</p><p>The NVMFS5C410NL 1T1G is designed to operate over a voltage range of 5 - 7.5V and is suitable for operation under harsh environmental conditions. The device features a wide operating temperature range of -40 to +125°C, making it suitable for industrial, automotive and outdoor applications. Its low power consumption and low operating temperature make it an ideal choice for portable and handheld applications. The NVMFS5C410NL 1T1G has an integrated N-Channel FET which provides an excellent RDSon of 0.002Ω and an output switching capability of up to 100A.</p><p>The NVMFS5C410NL 1T1G is a surface mount discrete MOSFET device, with an extremely low on-resistance of 0.002ohms. It is composed of a N-type MOSFET (MOSFET) with a reverse biased gate pu=dielectric build-in for stability in high-speed switching applications. It is a single FET with a single vertical gate structure which allows large signal switching at ultra-low voltage and extremely low on-resistance</p><p>The NVMFS5C410NL 1T1G is a very versatile device, with a wide range of applications. The device is used when an extremely fast switching speed and ultra low voltage operation is required. It is also used in high frequency switching applications due to its low gate capacitance and high switching speed. Additionally, it is used in discriminating circuits because of the low leakage current it provides. In addition, it is suitable for battery powered applications due to its low power consumption.</p><p>The working principle of the NVMFS5C410NL 1T1G is based on the four-layer structure which maximizes current flow with minimum resistance. The N-type MOSFET acts as a gate which controls the current flow between the drain and the source. When an applied voltage on the gate is higher than the threshold voltage, a current is generated between the drain and the source. When the gate voltage is lowered, the current flow decreases and eventually ceases. At that point, the transistor is considered “off”. The transistor is considered “on” when the drain to source current is strong enough. The mechanisms of decreasing and shutting off current flow are known as switching and short-circuit protection, respectively.</p><p>The NVMFS5C410NL 1T1G is best suited for applications that require fast switching speeds, low voltage operation and low power consumption. It is widely used in RF and communications, automotive, test and measurement, and industrial applications. Additionally, it is suited for use in discriminating circuits due to its low leakage current and its ability to protect against short-circuits.</p>

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