NVMFS5C646NLT1G Allicdata Electronics
Allicdata Part #:

NVMFS5C646NLT1G-ND

Manufacturer Part#:

NVMFS5C646NLT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 20A SO8FL
More Detail: N-Channel 60V 20A (Ta), 93A (Tc) 3.7W (Ta), 79W (T...
DataSheet: NVMFS5C646NLT1G datasheetNVMFS5C646NLT1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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The NVMFS5C646NLT1G is a discrete level logic—high-side, non-isolated switch with a wide range of applications and a comprehensive understanding of its working principle.

General Description of NVMFS5C646NLT1G

The NVMFS5C646NLT1G is a planar, non-insulated switch specially designed to control the voltage and power for a variety of application fields. The device also provides fast switching with low power dissipation. Its lower gate source voltage, VGS, makes it suitable for auto-scaled gate drivers, allowing it to serve as an efficient alternative to uniselectors in the operational amplifiers, or as the key component in other automation platforms.

Brief Introduction to the Working Principles of NVMFS5C646NLT1G

The NVMFS5C646NLT1G is an N-channel metal-oxide semiconductor field-effect transistor (MOSFET) which uses a metal-oxide dielectric as the gate insulation. It acts as a controllable, low-resistance switch between the source and drain terminals and can be used as an amplitude regulator, phase shifter, and even a threshold voltage detector. The device is activated by the gate current, causing the metal-oxide dielectric to move away from the gate and producing an inversion layer in the substrate. This creates a low-resistance channel between the source and drain, allowing the current to pass. A positive voltage applied to the gate increases the width of the inversion layer, and thus increases the conduction current between the source and drain. Conversely, a negative voltage reduces the width of the inversion layer, reducing the conduction current. This is the primary mechanism by which the NVMFS5C646NLT1G functions as a switch.

Applications of NVMFS5C646NLT1G

The NVMFS5C646NLT1G is ideal for a number of applications, from commercial to industrial. It can be used to perform a number of switching tasks, such as electronic motor control, voltage and current regulation for lighting systems, providing on/off control of electrical circuits, and even providing over-current protection in power supplies. Its high-speed switching and low on-resistance make it a suitable alternative to uniselectors in operational amplifiers and other automation platforms. Additionally, its low gate-to-source voltage, VGS, allows it to be used in applications requiring precise gate-voltage control, such as the low-side gate drivers of the gate-controlled DC-DC converters. It can even be used as a threshold voltage detector in various systems, thanks to its comprehensive voltage control.

Conclusion

The NVMFS5C646NLT1G is a versatile, high-speed switch with a vast number of applications and a comprehensive understanding of its working principle. From commercial to industrial settings, it can be used for a variety of tasks, from amplitude regulation to current protection. Its precise voltage control, fast switching speed, low on-resistance, and low gate-to-source voltage, VGS, make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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