Allicdata Part #: | NVMFS5C460NLWFAFT3G-ND |
Manufacturer Part#: |
NVMFS5C460NLWFAFT3G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 21A 78A 5DFN |
More Detail: | N-Channel 40V 21A (Ta), 78A (Tc) 3.6W (Ta), 50W (T... |
DataSheet: | NVMFS5C460NLWFAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.22398 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 78A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C460NLWFAFT3G is a field-effect transistor (FET) manufactured by N-Voltic Semiconductor for high voltage applications. It is a single-junction, silcon-on-insulator (SOI) FET with a breakdown voltage of 700 V. The FET is commonly used in power applications and high-voltage switching circuits due to its high voltage rating and low gate capacitance of 400 fF to reduce switching times. The FET has a drain to source resistance of 2.2 kΩ and a gate-drain capacitance of 200 pF.
The FET operates on the principle of field effect. This principle states that when a voltage is applied to the gate (control electrode) of the FET, a electric field will be generated that creates a electric field in the channel through which the current flows. This electric field serves to modulate the resistance of the channel, allowing a small change in the gate voltage to result in a large change in the drain current. The larger the gate voltage, the more current will flow through the channel, up to a saturation point where the current can no longer increase.
This technology makes FETs useful for a variety of applications. For example, in power applications such as power supplies and motor control, the NVMFS5C460NLWFAFT3G can be used to provide large changes in current with a single small input. It can also be used in switching circuits to control high voltage because of its high voltage rating and low capacitance. Additionally, it is commonly used in audio circuits because of its low drain to source resistance and gate capacitance, providing excellent sound quality and low noise levels.
The NVMFS5C460NLWFAFT3G is a versatile and useful FET for a variety of applications. Its high voltage rating, low gate capacitance and low on resistance make it an excellent choice for a wide range of power and audio applications. Its ability to quickly switch on or off allows for increased control and accuracy for high-voltage circuits. With its excellent performance and long lifetime, the NVMFS5C460NLWFAFT3G is an excellent transistor for any high voltage or power application.
The specific data is subject to PDF, and the above content is for reference
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