Allicdata Part #: | NVMFS5C460NT1G-ND |
Manufacturer Part#: |
NVMFS5C460NT1G |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 40V 5.3 MOHM T6 S08FL SIN |
More Detail: | N-Channel 40V 19A (Ta), 71A (Tc) 3.6W (Ta), 50W (T... |
DataSheet: | NVMFS5C460NT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.22291 |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 5.3 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 71A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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NVMFS5C460NT1G is a short name for N-channel enhancement mode power field effect transistor (MOSFET). It is a single device with a breakdown voltage of 460V and a continuous drain current of 30 A. The NVMFS5C460NT1G is used in a wide range of applications because of its low on-resistance and low gate threshold voltage.
The applications covered by NVMFS5C460NT1G are automotive, switching, DC-DC converters, motor control, lighting, power electronics, and computers. The main purpose of using a NVMFS5C460NT1G is to drive a DC motor or other loads with reduced switching losses and better efficiency. This type of MOSFET can also be used in circuits to control the operation of high power LED lighting, adjust the speed of AC motors, and in power supplies.
The working principle of the NVMFS5C460NT1G is based on the FET phenomenon known as “MOSFETs”, which is short for “metal-oxide-semiconductor field-effect transistors”. It is constructed from a p type substrate with N+ source and drain electrodes. The N-channel gate is located between the source and drain, and when voltage is applied to it, current flows through the N-channel. The NVMFS5C460NT1G is usually used in an enhancement mode, which means that a negative gate voltage is applied to the device in order to turn it on. When a negative voltage is applied to the gate, it forms an inversion layer in the substrate, resulting a channel that allows electrons to flow from the drain to the source.
The NVMFS5C460NT1G also has a built-in protection feature, which is an integral part of the operation of a MOSFET. This feature is called “body diode” and it prevents excessive voltage from entering the device. In addition, the NVMFS5C460NT1G also features a temperature operating range from -55 C to +175 C and a high isolation voltage of 5500V DC. This makes the NVMFS5C460NT1G suitable for a variety of high temperature and industrial applications.
In conclusion, the NVMFS5C460NT1G is a MOSFET suitable for a variety of applications. Due to its low on-resistance, low gate threshold voltage and high isolation voltage, it can be used in a wide range of applications such as motor control, power supplies, DC-DC converters, automotive, lighting, and computers. In addition, its built-in body diode protection helps to ensure the safety of the device in a variety of conditions.
The specific data is subject to PDF, and the above content is for reference
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