Allicdata Part #: | NVMFS5C404NLT3G-ND |
Manufacturer Part#: |
NVMFS5C404NLT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 49A SO8FL |
More Detail: | N-Channel 40V 49A (Ta), 352A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C404NLT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12168pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 181nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 0.75 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 49A (Ta), 352A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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NVMFS5C404NLT3G is a floating-gate MOSFET with non-volatile memory. It is generally used in many applications, such as embedded and security systems. The device\'s floating-gate is located between its source and drain, and the memory of the floating-gate can be altered through the use of specialized programming techniques.
NVMFS5C404NLT3G operates an extremely low voltage, and offers operation from 1.8V to 5.5V. This allows for efficient design optimization for low-power systems, without compromising performance. The device has a field-effect-transistor (FET) structure which provides high switching speeds, low noise, and low-power consumption. The device also features ESD protection and high reliability, making it suitable for use in automotive and medical applications.
The NVMFS5C404NLT3G is a depletion-mode MOSFET that operates from an ultra-low, low-voltage operation of 1.8V and 5.5V. The operation of the device is based on the field-effect principle. When the gate is at a low voltage, electrons are attracted through the gate, reducing the voltage of the source, which reduces the source-to-drain current. When the gate is at a higher voltage, electrons are repelled away from the gate, reducing the source-to-drain current. This makes the device suitable for use as a switching device.
The device also features an output impedance of 400 ohms. This allows it to be used as a buffer, providing consistent output across a wide range of voltages. The device is also very reliable, and is able to withstand temperatures ranging from -55°C to +125°C.
The advantages of using the NVMFS5C404NLT3G include low power consumption and high switching speeds. It also has a high input impedance and a constant output impedance over its operating range. The device is also highly reliable, making it well suited for use in automotive and medical applications.
Overall, the NVMFS5C404NLT3G is a versatile, low-voltage floating-gate MOSFET with non-volatile memory that can be used in a variety of applications. The device offers low power consumption and high switching speeds, and is highly reliable, making it suitable for automotive and medical applications.
The specific data is subject to PDF, and the above content is for reference
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