NVMFS5C442NLWFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C442NLWFT3G-ND

Manufacturer Part#:

NVMFS5C442NLWFT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 27A SO8FL
More Detail: N-Channel 40V 27A (Ta), 127A (Tc) 3.7W (Ta), 83W (...
DataSheet: NVMFS5C442NLWFT3G datasheetNVMFS5C442NLWFT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 127A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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NVMFS5C442NLWFT3G is a type of silicon n-channel power MOSFET specifically designed for power management and switched-mode applications. It meets the specific requirements of low voltage and low-frequency switching and in particular, is suitable for high side switching applications.

MOSFET is a nickname for a metal-oxide-semiconductor field effect transistor, one of the most versatile types of transistors available. It consists of three different terminals, the gate, drain and source. MOSFETs, due to their electrical design, are voltage-controlled devices and they offer higher input impedance than BJTs. This makes them an excellent choice for electronic power switches. NVMFS5C442NLWFT3G is also packaged in a TO-220 format with an integrated heat-sink making it an ideal component for a variety of power management and switch-mode applications.

NVMFS5C442NLWFT3G is designed to be used in both voltage and low-frequency switching applications. It is capable of switching up to 5A of current, has a maximum continuous drain current of 4A continuous, a maximum gate threshold voltage of 4.5V and a maximum drain-source voltage of 30V. It also has a maximum drain-source on-resistance of 0.092 ohms, making it ideal for high side switching applications.

NVMFS5C442NLWFT3G is best suited for low voltage and low-frequency switching applications such as power supply and general power management applications. Other applications include switch-mode power supplies, motor control, high-side switch-mode applications, actuation, high-side bias and backlighting solutions. It is also used in various industrial and consumer electronic applications.

NVMFS5C442NLWFT3G has a very simple and straightforward working principle. When an appropriate voltage is applied to the gate terminal, it creates an electric field which, in turn, creates a conductive path between the drain and source terminals, allowing the current to flow from the source to the drain. The resistance between the drain and source terminals is determined by the voltage applied to the gate terminal, allowing the user to choose the required resistance and thus, the current flowing through the device.

NVMFS5C442NLWFT3G is also highly reliable and robust making it suitable for long-term applications and operations. Its low-voltage, low-frequency switching and small size makes it an ideal choice for electronic power switches and power management applications. Furthermore, its wide application fields, excellent performance, and robust design make it the perfect choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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