Allicdata Part #: | NVMFS5C604NLT1G-ND |
Manufacturer Part#: |
NVMFS5C604NLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 40A SO8FL |
More Detail: | N-Channel 60V 40A (Ta), 287A (Tc) 3.9W (Ta), 200W ... |
DataSheet: | NVMFS5C604NLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Ta), 287A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C604NL-T1G is a single N-channel Logic Level Field Effect Transistor (FET), a type of transistor used to control circuits. This FET is manufactured by ON Semiconductor and is suitable for various applications.
The NVMFS5C604NL-T1G is an N-channel MOSFET and has a maximum on-state drain current of 100mA and a drain-source breakdown voltage of 20V, a gate-source breakdown voltage of 10V, and an on-resistance of 0.1 ohms. It consists of a single-channel FET and is designed for low frequency operation.
The NVMFS5C604NL-T1G is suitable for a range of applications. It can be used in power supplies, DC to DC converters, RF and analog circuits, as well as switching applications. It has a low on-resistance, making it suitable for switching high current loads. It also has a low gate-source threshold voltage, allowing it to be used for low voltage logic level control.
The NVMFS5C604NL-T1G is easy to use and reliable in operation. It can be integrated into variety of circuits without additional components, making it cost effective. The FET also has an ESD protection of up to 8 kV, making it more robust against static discharge.
The basic working principle of the NVMFS5C604NL-T1G is the same as that of any other FET. The gate of the FET is a controlled electrode used to vary the width of the conducting channel between the source and drain. When a positive voltage is applied to the gate, it closes the gate and a conduction path is formed. This increases the current flow from the source to the drain. When the gate voltage is removed, the conduction path is opened and the current flow is cut off.
The NVMFS5C604NL-T1G is a versatile single FET for a variety of applications. Its low on-resistance ensures high levels of performance, while its low gate-source threshold voltage facilitates low voltage logic level control. Its robust ESD protection makes it suitable for a wide range of applications, from control circuits to power supplies.
The specific data is subject to PDF, and the above content is for reference
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