NVMFD5C466NLT1G

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NVMFD5C466NLT1G is a array of N-Channel Enhanced Vertically StraitFET Power MOSFETs that is commonly used in power applications, automotive systems, and the industrial sector. The product is manufactured by Siliconix Corporation, a global provider of power semiconductor components and solutions.The NVMFD5C466NLT1G is part of the SiP4700 Power MOSFET family and consists of six individual chips in an array. The array is designed for medium voltage applications up to 200V. Each chip offers low on-resistance and gate charge, making it suitable for power applications for high frequency switching.The NVMFD5C466NLT1G utilizes a vertically-oriented MOS structure. This is a new design feature for MOSFETs, which improves the performance of the product. The architecture is based on a vertical N-Channel MOSFET and has several benefits. It increases the current capacity and reduces the on-resistance, allowing for high power delivery.The NVMFD5C466NLT1G also incorporates advanced packaging and integrated heat spreader technology to improve thermal performance. The package includes an integrated heat spreader to ensure effective heat dissipation and reduce thermal stress on the device. This improves reliability and reduces the chance of thermal runaway during operation.The NVMFD5C466NLT1G is suitable for a variety of power conversion and switching applications, ranging from AC/DC converters, DC/DC converters, and motor controllers. It can also be used in automotive systems and the industrial sector, such as solar panel systems and photovoltaic arrays.The NVMFD5C466NLT1G can be used in various applications due to its low on-resistance, low gate charge, and low total gate charge. The device has a maximum current rating of up to 5A (continuous) and a voltage rating of up to 200V (drain to source).The NVMFD5C466NLT1G also has a variety of gate charge options, ranging from 0–2nC for fast switching speeds. The device is rated for up to 500kHz switching frequency, and it has a maximum duty cycle of 100%.In terms of thermal characteristics, the NVMFD5C466NLT1G has a maximum junction temperature rating of 175°C. The device is rated for operation at up to 175°C with a junction-to-ambient thermal impedance of 7.7°C/W.The NVMFD5C466NLT1G is a reliable and efficient power MOSFET array that can be used in a variety of applications. Its low on-resistance, low gate charge, and integrated heat spreader technology make it an ideal choice for power applications. The device is also suitable for use in automotive systems and the industrial sector, such as solar panel systems and photovoltaic arrays.

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