PDTC143ZEF,115 Allicdata Electronics
Allicdata Part #:

568-2166-2-ND

Manufacturer Part#:

PDTC143ZEF,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS NPN 250MW SC89
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC143ZEF,115 datasheetPDTC143ZEF,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89
Base Part Number: DTC143
Description

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The PDTC143ZEF,115 is a single, pre-biased, bipolar junction transistor (BJT) designed for direct interfacing between a low voltage logic controller and larger DC electromechanical relay. With its pre-bias feature, it operates as a switch which is to be used for controlling as low as 6V DC relays and solenoides. This feature reduces the complexity that is usually required for tracking relays with small voltage signals.

The PDTC143ZEF,115 is a low voltage, high gain NPN silicon transistor with an open-collector output. It can handle up to 0.5A peak and 0.1A continuous current, and the frequency response ranges upto 100kHz. It has a wide operating temperature range of -55°C to +150°C.

The transistor features anti-partial-discharge protection, which makes it suitable for applications consisting of capacitive loads that require high injection voltages. Additionally, the device also offers protection against EOS/ESD and reverse electrostatic discharge. The on-chip resistors help to protect the transistor from any sources of overvoltage. Moreover, the device has an operating temperature range of -55°C to +150°C, a current gain (hFE) of 60, a minimum breakdown voltage of 40V, and a package power dissipation of 625mW. All these features make PDTC143ZEF,115 an ideal transistor for general purpose applications.

The PDTC143ZEF,115 can be employed in various scenarios such as automotive relays, converters and motor control, LED control, and battery chargers. It can also be used in applications where large loads need to be switched to and from a low voltage control circuit such as in power electronics.

The working principle of the PDTC143ZEF,115 relates to its ability to switch a load between two states. When voltage is applied to the base of the transistor, an electric field is created between the collector and emitter, which attracts electrons to the base region. This creates holes in the base region which serve as the current in the circuit. The increased current at the emitter-collector junction switches the load between the two states. This makes it ideal for applications like lamps and relays, for switching them on or off. Additionally, it can also be used for temperature control applications by providing a constant voltage to the base of the transistor and monitoring the current across it.

In conclusion, the PDTC143ZEF,115 is a single, pre-biased, bipolar junction transistor designed for direct interfacing between a low voltage logic controller and larger DC electromechanical relay. It can handle up to 0.5A peak and 0.1A continuous current, and offers protection against EOS/ESD and reverse electrostatic discharge. Its anti-partial-discharge feature makes it suitable for applications consisting of capacitive loads that require high injection voltages. The PDTC143ZEF,115 can be used in a variety of automotive, LED control, and battery charging applications. Its working principle is based on its ability to switch a load between two states by creating an electric field at the collector-emitter junction to attract electrons to the base region.

The specific data is subject to PDF, and the above content is for reference

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