Allicdata Part #: | SI4320DY-T1-GE3-ND |
Manufacturer Part#: |
SI4320DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 17A 8-SOIC |
More Detail: | N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4320DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6500pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4320DY-T1-GE3 is an advanced single FET (Field Effect Transistor) used in many applications. The device is a combination of an insulated gate bipolar transistor (IGBT) with a MOSFET. It is well suited for applications that require fast response and high power handling capabilities. This device is well suited for applications such as motor drives, servers, high power switching and general power applications.
The SI4320DY-T1-GE3 is a highly efficient device, capable of handling up to 17.5 A at -55°C to 175°C. It also features a wide voltage range from 19V to 59V. This voltage range is well suited for applications like motor drives and controllers. The device also features a low on-resistance of just 20mΩ and a low gate drive power loss of 0.9mV/A. This ensures the device operates efficiently and saves on power during operation.
The working principle of the SI4320DY-T1-GE3 is based on the concept of a MOSFET. MOSFETs are a type of Field Effect Transistor that uses a voltage to control the current flowing through them. They are highly efficient, with low on-resistance and gate drive power loss. The SI4320DY-T1-GE3 is triggered by applying a voltage to the gate. This causes electrons to flow through the device, resulting in a current flow. As with all MOSFETs, the current flow is proportional to the voltage applied to the gate.
The SI4320DY-T1-GE3 is well suited for applications that require fast response and high power handling capabilities. This device is suitable for use in a wide range of applications, such as motor drives, servers, high power switching and general power applications. It is also suitable for applications that require high efficiency, low on-resistance, and low gate drive power loss. The device can handle up to 17.5 A at a wide voltage range of 19 V to 59 V, making it suitable for many applications.
The SI4320DY-T1-GE3 is a robust and reliable single FET that is suitable for many applications. Its combination of low on-resistance, wide voltage range and fast response time makes it an ideal choice for applications requiring fast switching and high power handling. The device is suitable for many applications, from motor drives to general power applications, making it a highly versatile device.
The specific data is subject to PDF, and the above content is for reference
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