SI4310BDY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4310BDY-T1-E3 is a monolithic integrated array of logic level N-channel MOSFET solutions designed to facilitate module and system designs in a wide range of applications. The device is designed specifically to meet the needs of low- to medium-voltage applications, including battery-powered, low-noise, and low-power systems. This device is also ideal for applications that require high power efficiency and reliable operation. The SI4310BDY-T1-E3 offers excellent electrical properties such as low resistance on-state, low gate-to-drain and gate-to-source capacitances, high switching speed, and low reverse transfer capacitance. In addition, it features advanced design features such as a low on resistance for both low and high threshold voltages, reliability-enhancing circuit defects and superior thermal characteristics.

The SI4310BDY-T1-E3 features a 20mΩ barrier Schottky diode and a low inherent gate resistance which is ideal for low-to medium-voltage applications. Additionally, this device offers a temperature stable threshold voltage as well as excellent operating temperature range. Furthermore, its design allows for a very small die size which is ideal for ultra-compact systems. Finally, its design is also extremely reliable, with a nominal lifetime reliability rating of over 1 million hours.

The SI4310BDY-T1-E3 has a wide range of applications that include low-noise, low-power systems, battery-powered applications, lighting control solutions, audio/video acceptors, high-speed serial links, and automotive or industrial control systems. This device is also an excellent choice for applications that require high power efficiency and reliable operation. The SI4310BDY-T1-E3 is also capable of handling up to 10A of current and is available in both 8- and 10-pin packages.

The working principle of the SI4310BDY-T1-E3 device is based on the use of a logic level N-channel MOSFET array to achieve the desired performance and reliability. This array is connected to an input voltage source which activates the logic level MOSFETs, allowing current to flow through the device. The MOSFETs are designed to have low on-state resistance and low gate-to-drain and gate-to-source capacitances, delivering extremely high power efficiency. Furthermore, the MOSFET design is optimized for low-to-medium voltage applications with excellent switching speeds and low reverse transfer capacitance.

The SI4310BDY-T1-E3 is an ideal solution for applications that require a reliable, low-noise, low-power and high power efficiency. Its design features include low on resistance for both low and high threshold voltages, reliable circuit defects, temperature stable threshold voltage, and excellent thermal characteristics. This device is also available in 8- and 10-pin packages and is capable of handling up to 10A of current. As such, it is suitable for a wide range of applications that demand reliable and efficient performance.

The specific data is subject to PDF, and the above content is for reference