Allicdata Part #: | SI4362BDY-T1-GE3-ND |
Manufacturer Part#: |
SI4362BDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 29A 8-SOIC |
More Detail: | N-Channel 30V 29A (Tc) 3W (Ta), 6.6W (Tc) Surface ... |
DataSheet: | SI4362BDY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 6.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 19.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4362BDY-T1-GE3 is a field effect transistor (FET) that falls into the category of single mosfet transistors. It is best-suited for use in various high-power applications and is commonly found in power supply systems, motors, vacuum cleaners, and other similarly demanding gadgets and machines. With its large power limit and a P-channel MOSFET technology for enhanced on-resistance at full rated current and temperature, this transistor can be the best choice for applications where performance and reliability are sought after.
A field effect transistor consists of a gate, a source, and a drain. The gate is one of the ideal control elements of a transistor, as it can control the current flow through the device, while the source and the drain are two contacts that are made to one side of the device, allowing current to flow through it. The SI4362BDY-T1-GE3 is a P-channel type with a drain-to-source breakdown voltage of 40V and a drain current of 7A. It offers a low on-resistance of 180mΩ and has a low gate-source voltage of 4.5V.
In order to make use of the SI4362BDY-T1-GE3 MOSFET, it is important to understand its working principle. At the gate, an electric field will be created as soon as an external voltage source is applied. This field will allow current to flow from the source to the drain side, allowing power to be transmitted from the source end to the drain end. This field is modulated using the Gate-Source Voltage (VGS), and this is what allows it to be used in various applications.
The SI4362BDY-T1-GE3 is capable of handling a high level of power with its large maximum power limit and P-channel MOSFET technology. This makes it especially beneficial for applications where high-quality performance and reliability are required, such as those in power supply systems, motors, vacuum cleaners, and other similarly demanding gadgets and machines. Furthermore, it has a low drain-source capacitance rate which is also great for these applications.
The SI4362BDY-T1-GE3 is a versatile device as it can be used in multiple applications. It can be used in applications where power needs to be switched on and off, such as switching power supplies, or in low-noise circuits to reduce noise. In addition, the SI4362BDY-T1-GE3 is also a great choice for sensitive applications where the current must remain constant, such as in digital circuits. This is because the transistor can reliably control the output current and voltage.
The SI4362BDY-T1-GE3 is a high-performance MOSFET transistor that is ideal for various high-power applications. Its low on-resistance and gate-source voltage, as well as its high power-handling capability, make it suitable for a wide range of applications. Its low drain-source capacitance also ensures reliable current and voltage control. This makes it well-suited to applications where high-quality performance and reliability are sought after, such as those found in power supply systems, motors, vacuum cleaners, and other similarly demanding gadgets and machines.
The specific data is subject to PDF, and the above content is for reference
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