SI4390DY-T1-E3

Vgs(th) (Max) @ Id:	2.8V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.4W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

The SI4390DY-T1-E3 is a highly integrated MOSFET capable of switchingand controlling higher voltages and currents than is made possible bystandard discrete devices. The SI4390DY-T1-E3 combines theadvantages of a low Rds(on) with a low gate charge making it an excellentchoice for high current switching applications.

Application Fields

The SI4390DY-T1-E3 is suitable for a wide range of applications,ranging from power management and lighting to industrial, automotive andconsumer applications. As a power switch, the device can be used in switched mode power supplies, DC to DC converters, and motor controls. It can also be used for automotive body and power train applications, as well as in appliances, lighting and HVAC systems. One of its unique applications is as part of a high-voltage DC supply circuit, where it can provide up to 8A of output current at extremely low on-resistance.Due to its fast switching speeds and low Rds(on), the SI4390DY-T1-E3 can also be used in high-speed switching applications such as in data converters and RF transmitters. Its low gate charge facilitates high-speed current-mode operation. Additionally, the device\'s low levels of charge injection and ringing provide superior noise immunity in these applications.

Working Principle

The SI4390DY-T1-E3 is a MOSFET type power switch. MOSFETs operate by controlling the electric field through a gate voltage and a gate source voltage. When the gate source voltage reaches a certain threshold, the MOSFET switches on, allowing current flow between the source and drain. The switching of the SI4390DY-T1-E3 is accomplished by an internal control circuit that detects changes in the gate to source voltage. When the gate to source voltage reaches the threshold operating point, the device will switch on.When switching on, the drain-source voltage is controlled by the gate voltage, which is adjustable over a range of 3v to 14v. This allows for precision control of the drain-source voltage, which can be further adjusted using other external components such as resistors or capacitors.In addition to its fast switching speeds, the SI4390DY-T1-E3 also has a low Rds(on) of 2.5mΩ. This allows the device to operate at low voltage levels, reducing power losses and making it an excellent choice for high current switching applications.

Conclusion

The SI4390DY-T1-E3 is a highly integrated MOSFET that is suitable for a wide range of applications, ranging from power management and lighting to industrial, automotive and consumer applications. Its low Rds(on) allows the device to operate at lower voltage levels, reducing power losses and making it an excellent choice for high current switching applications. Its fast switching speeds, low gate charge and superior noise immunity also make it well-suited for high-speed current-mode operations and RF transmitters.

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