Allicdata Part #: | SI4398DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4398DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 19A 8-SOIC |
More Detail: | N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4398DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5620pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4398DY-T1-E3 is a high-performance N-Channel MOSFET designed for demanding, high current applications. Featuring a low on-resistance, fast switching speed, and low total gate charge, it is ideal for applications such as switching, DC/DC converters, power management, and rectifier bridges. This device is also widely used in power systems, robotics, medical instruments, and high-voltage switching.
The SI4398DY-T1-E3 is a single N-Channel enhancement-mode power field-effect transistor (MOSFET). It is a four-terminal device with a gate, a source, a drain, and a body. The source and drain are the two terminals that control the device\'s current, while the body is internally connected to the source. The gate is the control terminal, and is used to control the flow of electrons through the device.
MOSFETs are voltage-controlled devices, meaning that the current flowing through them is determined by the applied voltage at the gate. If a certain voltage is applied to the gate, an electric field is created between the source and the drain. This electric field causes the electrons to flow from the source to the drain. The amount of current flowing through the device is determined by the voltage applied to the gate. The higher the voltage, the higher the current.
The SI4398DY-T1-E3 is a high-performance MOSFET designed for high current applications. It features a low on-resistance, fast switching speed, and low total gate charge. This makes it an excellent choice for high current switching, rectifier bridges, and power management applications. It also has a wide operating temperature range of -55°C to +125°C, making it well suited for many industrial applications.
The SI4398DY-T1-E3 can also be used as a switch to control the output of devices such as AC motors, DC motors, and linear actuators. This device is also used in robotics, medical instruments, high-voltage switching, and other power systems. Additionally, the SI4398DY-T1-E3 can also be used to amplify weak signals in audio amplifiers and motor controllers.
In summary, the SI4398DY-T1-E3 is a high-performance N-Channel MOSFET suitable for demanding high-current applications. It features a low on-resistance, fast switching speed, and low total gate charge. It is used in a variety of applications including high current switching, rectifier bridges, power management, robotics, medical instruments, audio amplifiers, motor controllers, and high-voltage switching. The SI4398DY-T1-E3 is an excellent choice for demanding, high current applications.
The specific data is subject to PDF, and the above content is for reference
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