Allicdata Part #: | SI4324DY-T1-GE3-ND |
Manufacturer Part#: |
SI4324DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 36A 8-SOIC |
More Detail: | N-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac... |
DataSheet: | SI4324DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 7.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3510pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4324DY-T1-GE3 is a type of transistor that falls under the category of Field Effect Transistors (FETs) and more specifically, MOSFETs - Single. It has many applications, and a few of them will be discussed throughout this article. But before that, we should understand the working principle of this type of transistor.
A MOSFET is a three-terminal transistor whose working principle is based on the electrostatic attraction and repulsion of electrons. When an external electric field is applied, electrons inside the transistor are attracted or repelled depending on their nature. The voltage applied to the source-drain region controls the amount of current that flows through the transistor. When the voltage at the gate is increased, the current in the source-drain region increases as well, and vice-versa.
The SI4324DY-T1-GE3 MOSFET is a depletion-mode device, meaning that the channel conductivity decreases as the gate voltage is increased. As such, it can be used as a switch to control the magnitude of current between two points in a circuit. This device can be used in amplifiers, as well as where low noise and high frequency operation is required. It can also be used in switching circuits, where it can be used to switch ON and OFF, or to control the current flow.
In addition, the SI4324DY-T1-GE3 can also be used in power supplies, as it can be used to regulate the amount of current that is supplied to the loads. This can be done by varying the gate voltage and thus, controlling the current flow through the device. Moreover, this device can also be used in logic circuits, as it can be used to control the flow of logic signals in a circuit.
The SI4324DY-T1-GE3 also finds application in RF circuits, such as in RF amplifiers, oscillators and frequency multipliers. It can also be used in communications systems, as it can be used in microwave amplifiers and transmitters. In addition, it can be used in smart phones and tablets, as it can be used to drive displays,keypads, and RF front-end circuits.
In summary, the SI4324DY-T1-GE3 is a type of MOSFET that falls under the category of Field Effect Transistors (FETs) and more specifically, MOSFETs - Single. Its working principle is based on the electrostatic attraction and repulsion of electrons. It can be used in various applications such as amplifiers, switching circuits, power supplies, logic circuits, RF circuits, and communications systems. It can also be used in smart phones and tablets, as it can be used to drive displays,keypads, and RF front-end circuits.
The specific data is subject to PDF, and the above content is for reference
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