Allicdata Part #: | SI4322DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4322DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 18A 8-SOIC |
More Detail: | N-Channel 30V 18A (Tc) 3.1W (Ta), 5.4W (Tc) Surfac... |
DataSheet: | SI4322DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 5.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SI4322DY-T1-E3 is a type of transistor and a member of the MOSFET family. It is a single-gated field effect transistor that provides fast switching and high current capabilities. This makes it well-suited for applications in power supply, motor control, and lighting control. Despite its small size, the SI4322DY-T1-E3 is an able power switch, particularly in conditions where high voltage and load current must be switched quickly, such as in motor circuits. The key feature of the MOSFET family is their insulation, making them suitable for high-voltage applications.
The working principle of the SI4322DY-T1-E3 relies on the "gate principle" of MOSFETs. This principle is based on the flow of electrons from the source to the drain when there is a voltage difference between them. The voltage must be of a high enough value for there to be a significant number of electrons able to flow through. By applying an additional voltage to the gate, electrons will be attracted from the source region to the drain region, thereby increasing the current flow from the source to the drain. This is because the gate voltage causes the formation of a conductive channel, allowing the electrons to flow freely between the source and drain.
In the case of the SI4322DY-T1-E3, the gate is connected to a metal oxide which acts as an insulator, preventing any current flow between the source and drain. This makes the MOSFET ideal for high voltage applications, as well as providing fast switching times and high current capabilities. The gate is also capable of driving low voltages, making it suitable for digital logic applications.
The SI4322DY-T1-E3 can also be used in a variety of other applications such as lighting control, motor speed control, and high efficiency power supply due to its low voltage and current capabilities. Its small size also makes it an ideal choice for small circuit designs.
The SI4322DY-T1-E3 is a powerful and versatile MOSFET and is well-suited for a variety of high voltage and current applications. Its fast switching capabilities and insulation make it suitable for a range of applications, and its small size allows it to be used in a wide variety of small circuit designs. Its versatility and power make it a popular choice for both hobbyists and professionals.
The specific data is subject to PDF, and the above content is for reference
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