Allicdata Part #: | SI4354DY-T1-GE3-ND |
Manufacturer Part#: |
SI4354DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 9.5A 8-SOIC |
More Detail: | N-Channel 30V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-... |
DataSheet: | SI4354DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4354DY-T1-GE3 is a single high-performance N-Channel MOSFET from Vishay Semiconductor. It is used in a wide range of digital, analog, and power applications in consumer, industrial, and international markets. This MOSFET is designed to provide high levels of reliability, efficiency, and power density.
Application field
The SI4354DY-T1-GE3 MOSFET can be generally used in a variety of power switching, voltage scaler, and power factor correction applications. It is ideal for applications like dc/dc converters, renewable energy inverters, high power amplifiers, battery chargers, lighting ballast, DC to AC converters, LCD TVS, AC to DC converters, and motor control. This single N-Channel MOSFET is also suitable for high-efficiency, high frequency, low current-sourcing / high current-sinking applications.
Working Principle
The working principle of MOSFETs is that they can be used to control the large current flow through them using a small applied voltage. Thus, MOSFETs are used to control the on/off state of a device. The SI4354DY-T1-GE3 is an enhancement-mode MOSFET and the application of a voltage across the gate-drain terminals turns the device on, hence the current starts to flow through the drain, source, and gate regions. This device utilizes a planar diode, which forms an ESD protection barrier between the input (gate) and the output (drain) pins. The MOSFET has a low On-resistance and low gate drive, allowing it to handle high currents effectively.
The SI4354DY-T1-GE3 has an excellent switching performance for high-frequency applications, with a very low input capacitance. This product provides a high level of power dissipation, as well as ESD and Surge protection, making it an ideal choice for a variety of applications. Additionally, Vishay Semiconductor offers the SI4354DY-T1-GE3 in a variety of packaging options, making it suitable for manual, automated, and machine soldering.
Conclusion
The SI4354DY-T1-GE3 is an ideal choice for a variety of power switching, voltage scaler, and power factor correction applications. It is a single high performance N-Channel MOSFET from Vishay Semiconductor, designed for high levels of reliability, efficiency, and power density. This device utilizes a planar diode, and has a low On-resistance and low gate drive, allowing it to handle high currents effectively. It is available in a variety of packaging options.
The specific data is subject to PDF, and the above content is for reference
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