SI5935DC-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5935DC-T1-GE3-ND

Manufacturer Part#:

SI5935DC-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 20V 3A 1206-8
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 3A 1.1W Surfac...
DataSheet: SI5935DC-T1-GE3 datasheetSI5935DC-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: SI5935
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5935DC-T1-GE3 is a highly reliable and efficient metal-oxide-semiconductor field-effect transistor (MOSFET) array. It has been designed with a wide variety of different applications in mind, including industrial, automotive, and consumer electronics applications. This particular device consists of three transistors, each of which is capable of operating at voltages from 0 to 25V, and is rated for up to 45A drain-source current in a fully saturated condition. The SI5935DC-T1-GE3 can be used in a wide range of applications, from motor control to power management, as well as for general switching and load control.

The three transistors in the SI5935DC-T1-GE3 are arranged in a single package. Each of the transistors is connected to its own gate, drain, and source, allowing it to be independently controlled. This allows the output to be controlled separately for each of the transistors, allowing the device to be used in a variety of applications. The device also features an integrated protection circuit that prevents the device from being damaged due to overvoltage, overcurrent, or thermal overload, ensuring the proper operation of the device.

The working principle of the SI5935DC-T1-GE3 is based on the fact that a MOSFET is a voltage-controlled device. The gate voltage is used to control the current flow between the drain and source terminals, as it acts as an insulator when the voltage is low, and as a conductor when the voltage is high. This allows the device to be used for a wide range of applications, including motor control, power management, and general switching and load control.

The SI5935DC-T1-GE3 is an ideal choice for a variety of applications, due to its wide range of possible applications and its high level of reliability and efficiency. It is an especially suitable choice for applications such as motor control, power management, and general switching and load control. Its integrated protection circuit also ensures the device\'s proper operation, making it an ideal choice for any application that requires reliable and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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