Allicdata Part #: | SI5935DC-T1-GE3-ND |
Manufacturer Part#: |
SI5935DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 3A 1206-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3A 1.1W Surfac... |
DataSheet: | SI5935DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI5935 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 86 mOhm @ 3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI5935DC-T1-GE3 is a highly reliable and efficient metal-oxide-semiconductor field-effect transistor (MOSFET) array. It has been designed with a wide variety of different applications in mind, including industrial, automotive, and consumer electronics applications. This particular device consists of three transistors, each of which is capable of operating at voltages from 0 to 25V, and is rated for up to 45A drain-source current in a fully saturated condition. The SI5935DC-T1-GE3 can be used in a wide range of applications, from motor control to power management, as well as for general switching and load control.
The three transistors in the SI5935DC-T1-GE3 are arranged in a single package. Each of the transistors is connected to its own gate, drain, and source, allowing it to be independently controlled. This allows the output to be controlled separately for each of the transistors, allowing the device to be used in a variety of applications. The device also features an integrated protection circuit that prevents the device from being damaged due to overvoltage, overcurrent, or thermal overload, ensuring the proper operation of the device.
The working principle of the SI5935DC-T1-GE3 is based on the fact that a MOSFET is a voltage-controlled device. The gate voltage is used to control the current flow between the drain and source terminals, as it acts as an insulator when the voltage is low, and as a conductor when the voltage is high. This allows the device to be used for a wide range of applications, including motor control, power management, and general switching and load control.
The SI5935DC-T1-GE3 is an ideal choice for a variety of applications, due to its wide range of possible applications and its high level of reliability and efficiency. It is an especially suitable choice for applications such as motor control, power management, and general switching and load control. Its integrated protection circuit also ensures the device\'s proper operation, making it an ideal choice for any application that requires reliable and efficient operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI5902DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 2.9A 120... |
SI5903DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 2.1A 120... |
SI5904DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.1A 120... |
SI5920DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 8V 4A 1206-8... |
SI5933DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 2.7A 120... |
SI5935DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3A 1206-... |
SI5938DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 6A 8PWRP... |
SI5943DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 6A 8PWRP... |
SI5944DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 40V 6A 8PWRP... |
SI5947DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 6A 8PWRP... |
SI5906DU-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 6A PPAK ... |
SI5933CDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5933CDC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5935CDC-T1-E3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET 2P-CH 20V 4A 1206-... |
SI5904DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.1A 120... |
SI5920DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 8V 4A 1206-8... |
SI5913DC-T1-E3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET P-CH 20V 4A 1206-8... |
SI5913DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4A 1206-8... |
SI5947DU-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 6A PPAK ... |
SI5980DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 100V 2.5A CH... |
SI5903DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.1A 120... |
SI5905BDC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 4A 1206-8... |
SI5905BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 4A 1206-8... |
SI5905DC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 3A 1206-8... |
SI5905DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 3A 1206-8... |
SI5915BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 4A 1206-8... |
SI5915BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 4A 1206-8... |
SI5915DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 3.4A 1206... |
SI5915DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 3.4A 1206... |
SI5933DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 2.7A 120... |
SI5935DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 3A 1206-... |
SI5943DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 6A 8PWRP... |
SI5975DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 3.1A CHI... |
SI5975DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 3.1A CHI... |
SI5935CDC-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET 2P-CH 20V 4A 1206-... |
SI5936DU-T1-GE3 | Vishay Silic... | -- | 27000 | MOSFET 2N-CH 30V 6A PWRPK... |
SI5902BDC-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET 2N-CH 30V 4A 1206-... |
SI5908DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.4A 120... |
SI5908DC-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET 2N-CH 20V 4.4A 120... |
SI5922DU-T1-GE3 | Vishay Silic... | 0.15 $ | 3000 | MOSFET 2 N-CH 30V 6A POWE... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...