Allicdata Part #: | SI5903DC-T1-E3TR-ND |
Manufacturer Part#: |
SI5903DC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 2.1A 1206-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.1A 1.1W Surf... |
DataSheet: | SI5903DC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA (Min) |
Base Part Number: | SI5903 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 2.1A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5903DC-T1-E3 is an advanced innovative array of MOSFETs. It includes very low on-resistance and dynamic resistance, eliminating the need for external gate resistors. It is specifically designed to provide superior performance with minimal power consumption in harsh environments. These features make it suitable for a variety of applications, including power systems.The SI5903DC-T1-E3 is made up of an array of MOSFETs connected in parallel, with each having its own dedicated gate. These gates are connected to the source and drain terminals of the array. The array is then supplied with a voltage signal and the gates will open up or close depending on the voltage levels present. This is the key to its superior performance, as it allows for fast switching of the MOSFETs with minimal power consumption.The SI5903DC-T1-E3 is specifically designed for applications where high power density, high power efficiency, and low on-resistance are of the utmost importance. It is an ideal solution for applications such as solar micro-inverters, power management systems, and renewable energy systems.The SI5903DC-T1-E3 also has excellent performance in harsh environments, which makes it ideal for automotive, military and industrial applications. This advanced MOSFET array can also be used in a variety of industrial and consumer electronics, including cell phones and computers, as well as medical and home appliances.The SI5903DC-T1-E3 operates in three basic modes: open drain, pull-up, and half-bridge. In open drain mode, the gates open and close depending on the voltage levels present. In pull-up mode, both gates remain open while drawing power from the source and drain terminals, while in half-bridge mode, only one gate remains open while providing power from both source and drain.The SI5903DC-T1-E3 has a wide range of advantages, which make it an excellent choice for a variety of applications. It has low on-resistance, meaning that there is minimal power loss, which is great for applications where efficiency is critical. The wide range of modes also means that it is suitable for a variety of applications. Furthermore, it has a wide temperature range which allows it to be used in extreme environments.The SI5903DC-T1-E3 is a powerful and reliable array of MOSFETs with excellent performance and power efficiency. It is a great choice for applications where power density, efficiency, and low on-resistance are essential, as well as in extreme environments. This innovative MOSFET array is a valuable addition to any designer’s toolkit as it can help them create high-performance designs.
The specific data is subject to PDF, and the above content is for reference
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