SI5904DC-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5904DC-T1-GE3TR-ND |
Manufacturer Part#: |
SI5904DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 3.1A 1206-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 3.1A 1.1W Surf... |
DataSheet: | SI5904DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | SI5904 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 3.1A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5904DC-T1-GE3 is an integrated transistor array application field consisting of common source p-channel and n-channel power MOSFETs. This transistor array not only offers an efficient solution for power management applications, but also provides superior performance, superior efficiency and superior surge current ratings when compared to discrete components.
The SI5904DC-T1-GE3 is designed as an all-in- one solution to help power systems engineers simplify and reduce design cycle time. This N-channel and P-channel discrete MOSFET arrays help reduce board space requirements, minimize design time and lower system cost by eliminating the need for multiple discrete components and associated assembly steps. The MOSFETs used in the SI5904DC-T1-GE3 are optimized lay-out for an efficient solution as well as minimizing effects such as noise, parasitic components, self-heating and power dissipation.
The integration of N- and P-channel MOSFETs into a single package offers superior protection against voltage surges, as well as superior surge current ratings when compared to discrete components. The fast on-time and off-time of the SI5904DC-T1-GE3 helps to minimize the switching time and maximize the efficiency of the system. The integrated MOSFET array also meets the requirements of a wide range of DC/DC converter and other applications.
The working principle of the SI5904DC-T1-GE3 is based on the fact that when a voltage is applied across the N-channel MOSFET it will turn on. Similarly, when a voltage is applied across the P-channel MOSFET it will turn off. By controlling the voltage applied to each MOSFET, the output power switching can be precisely controlled. By intelligently controlling the gate voltage of each of the MOSFETs, it is possible to precisely control the output voltage levels.
In addition, the SI5904DC-T1-GE3 also provides improved noise immunity and surge current ratings. The integrated power MOSFETs also help to reduce switching losses and improve overall efficiency. The integrated N and P MOSFETs also provide superior thermal stability and robustness.
The SI5904DC-T1-GE3 is a powerful yet efficient transistor array solution for power systems. This transistor array has been designed for applications that require high efficiency, superior surge current ratings, low noise and robust operation. It is ideal for use in applications such as DC/DC converters, motor control, power supplies and battery management.
The specific data is subject to PDF, and the above content is for reference
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SI5933CDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5933CDC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5935CDC-T1-E3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET 2P-CH 20V 4A 1206-... |
SI5904DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 3.1A 120... |
SI5920DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 8V 4A 1206-8... |
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