SI5904DC-T1-E3

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Base Part Number:	SI5904
Supplier Device Package:	1206-8 ChipFET™
Package / Case:	8-SMD, Flat Lead
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.1W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	75 mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.1A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI5904DC-T1-E3 Application Field and Working Principle

The SI5904DC-T1-E3 is a high voltage dual gate depletion mode N-channel enhancement IGFET array with two independent N-channel MOS transistors. This particular type of IGFET – also known as a metal oxide semiconductor field effect transistor (MOSFET) – is a type of unipolar transistor used as amplifying and switching devices in pulsed power circuits.SI5904DC-T1-E3 uses a depletion mode N-channel enhancement IGFET based on N-channel MOS devices, (Envelope isolation version). This type of IGFET has an internal gate to source voltage of +30V, an internal gate to drain voltage of +30V and can operate with a supply voltage of +35V. This array of IGFETs is made up of two different circuits for both the common drain and common source. The individual circuits are connected using a common gate electrode, which allows for a uniform bias of all transistors within the array.This device is used in various applications such as power switching, linear amplification and load management. It is not only used in power management circuits, but also in various industrial, automotive and communications applications. It is usually used as an active switch and power amplifier, in order to provide low-loss signal transmission and provide fast switching speed over a wide frequency range. This device also provides high input impedance and fast switching speed.The working principle behind this type of device is that when an ac voltage is applied across the gate and source terminals, the electric field spreads over the oxide layer between the two terminals, resulting in a current flowing through the MOSFET’s channel. This field effect is dependent on the frequency of the voltage, the thickness of the oxide layer, the doping profile and the magnitude of the voltage. The higher the frequency, the thinner the oxide layer, the better the doping profile and the larger the magnitude of the voltage, the greater the electric field effect.The amount of voltage applied at the gate will determine if the MOSFET is acting as a switch or amplifier. If the voltage is below the threshold, the MOSFET will remain ‘off’, resulting in no current flow through the MOSFET. Conversely, if the voltage is greater than the threshold, the device will switch on and allow current to flow from source to drain. The gate voltage, along with the applied drain voltage, will determine the amount of current that can flow.In addition, the MOSFET can be used to create complex, non-linear circuits such as pulse width modulators, where the pulse width can be adjusted without significantly affecting the amplitude or frequency of the associated signals.In conclusion, the SI5904DC-T1-E3 is a high voltage dual gate N-channel enhancement IGFET array which can be used for various industrial, automotive and communications applications. Its operation is based on the electric field effect and the gate voltage in order to control the current flowing through the MOSFET’s channel. This device provides convenience and high input impedance, as well as low-loss signal transmission and fast switching speed over a wide frequency range.

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