SI5943DU-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5943DU-T1-GE3-ND

Manufacturer Part#:

SI5943DU-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 12V 6A 8PWRPAK
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 6A 8.3W Surfac...
DataSheet: SI5943DU-T1-GE3 datasheetSI5943DU-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: SI5943
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5943DU-T1-GE3 is a part of a high-performance dual N-Channel field effect transistor (FET) array. Manufactured by STMicroelectronics, the part is ideal for switching and sensing applications in a wide range of industries, including automotive, consumer electronics, industrial and medical. This particular series offers excellent on-resistance, low gate charge, fast switching speeds and low critical capacitance.

The SI5943DU-T1-GE3 is a two-channel field effect transistor array device that is comprised of two independent N-channel metal-oxide semi-conductor field effect transistors (MOSFETs). Each channel contains its own gate, source and drain connections as well as its own body diode. By having two MOSFET channels, each channel can be used independently with separate drive signals.

The SI5943DU-T1-GE3 works on the basic principle of MOSFET technology. This technology works by passing an electrical current through the gates of the MOSFETs. The current “pulls” the electrons from the source to the drain, thus creating a conductive path or “channel” between them. By controlling the amount of current passed through the gate, the output current can be turned “on” or “off”, thus controlling whether or not the device is conducting electricity.

The SI5943DU-T1-GE3 is an ideal solution for many critical applications due to its high voltage and current performance, fast switching speed and low critical capacitance. It is often used in automotive applications such as anti-lock brake systems, in consumer electronics such as televisions and DVD players, and in industrial applications such as power supplies and motor control. It is also suitable for applications that require low heat generation, such as medical equipment.

The SI5943DU-T1-GE3 is a reliable and versatile field effect transistor array, offering a wide range of features that make it an attractive choice for a variety of applications. Thanks to its excellent on-resistance, fast switching speeds, low critical capacitance and efficient performance, the SI5943DU-T1-GE3 transistor array is the perfect solution for critical applications.

The specific data is subject to PDF, and the above content is for reference

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