SI5920DC-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5920DC-T1-GE3TR-ND |
Manufacturer Part#: |
SI5920DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 8V 4A 1206-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 8V 4A 3.12W Surfac... |
DataSheet: | SI5920DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI5920 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.12W |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 4V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 6.8A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 8V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5920DC-T1-GE3 is a power transistor array, which is part of the family of surface mount transistors. This type of array is used primarily in the fields of power switching, audio amplifiers and power supplies. It is often used in mobile devices such as smartphones and laptop computers. This array is also used in industrial and hobby control applications.
The SI5920DC-T1-GE3 is equipped with three parallel N-Channel power MOSFETs, each built with a vertical double-diffused field-effect (VDMOS) technology. VDMOS is a power transistor fabrication technique that is based on the principle of vertical junction isolation. It allows for higher operational voltages in the output section, resulting in more efficient power switching. The device also features low gate turn-off threshold voltage and low gate charge for optimal efficiency. Because of these features, the SI5920DC-T1-GE3 is often chosen for low power switching applications.
The SI5920DC-T1-GE3 is designed with multiple input ports and three output ports. Its supply voltage can range from 8V to 40V while its Output voltage can range from 6V to 22V. The device has a continuous output current rating of 21A and a peak output current rating of 42A. This transistor array can operate at temperatures ranging from -40°C to 125°C.
The working principle of the SI5920DC-T1-GE3 is based on the transfer of energy from the source terminal to the drain terminal. When a voltage is applied to the gate, it causes electron charge to move from the source to the drain, resulting in an accumulation of electrons at the drain side. This builds up a potential barrier between the source and the drain, which prevents further electron transfer. This is the principle of FETs, which are characterized by high input impedance and low output impedance. This allows the device to function as a switch, allowing current to flow through the circuit when the gate voltage is applied.
The SI5920DC-T1-GE3 is widely used in the fields of power switching and audio amplifiers. It is also used in opto-isolators and DC-DC converters. It is designed to be used in small portable devices such as mobile phones, laptops, and home entertainment systems. Its low drive voltage and low drain-source on-voltage makes it ideal for low-power switching applications.
The SI5920DC-T1-GE3 is a versatile and efficient power transistor array that is used in many applications. Its features make it suitable for low power switching applications and its wide operating temperature range makes it suitable for use in many environments. With its low gate charge and high current capability, it is an excellent choice for any power switch or audio amplifier circuit.
The specific data is subject to PDF, and the above content is for reference
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