SI5944DU-T1-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3V @ 250µA
Base Part Number:	SI5944
Supplier Device Package:	PowerPAK® ChipFet Dual
Package / Case:	PowerPAK® ChipFET™ Dual
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	10W
Input Capacitance (Ciss) (Max) @ Vds:	210pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:	6.6nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	112 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C:	6A
Drain to Source Voltage (Vdss):	40V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

SI5944DU-T1-E3 is an array of N-Channel Metal Oxide Semiconductor Field-Effect Transistors (MOSFET), designed for high switching applications. This array has a total of six-transistors and four-junctions, each junction consisting of either an N- or P-channel transistor. The array is manufactured with an array of ultra-fast T-13BHN transistors, which are capable of providing high-indicates switching frequencies when operated in the rated voltage range. This array also features high-quality junction leakage characteristics and wide-ranging gate capacitances.

Applications

SI5944DU-T1-E3 array is designed for high-frequency switching applications; it is designed for the power-control and power-switching system. This array can be used for driving high-frequency switching and analog signal applications such as power-integrated circuits, switches and relays, audio amplifiers and DC-DC converters. Furthermore, it is a suitable device for energy management applications in systems such as lighting, healthcare, and industrial automation systems.

Working principle

The SI5944DU-T1-E3 array comprises of six transistors, positioned in an rectangular array with four junctions. Each junction consists of an N-channel and P-channel transistor providing an N-channel and P-channel junction that are commonly used in power MOSFETs. The array is built with ultra-fast T-13BHN transistors that offer high-speed switching performance when used in the rated voltage range. The transistors within the array are interconnected via a gate-source, gate-drain and body-drain network.

When the input voltage is applied to the gate of the transistors in the array, there is a build-up of a large capacitance due to the charge carriers associated with the gate-drain junction. This results in a low resistance path between the gate and drain, providing an on-state signal. When the signal is turned off, the gate-drain junction is released and the on-state current dissipates, turning off the signal.

The transistors within the array operate as a bi-directional switch, enabling the control of either a positive or negative current depending on the polarity of the input voltage. The gate-source network provides the means to control the flow of current through the array, while the body-drain network minimizes the on-resistance by providing a low-resistance path between the gate and body of the transistor. This will prevent any heat buildup that could cause electrical damage.

Conclusion

The SI5944DU-T1-E3 array is a powerful device that offers excellent switching performance and reliability when used in high-frequency applications. The array is designed for power-control and power-switching systems, such as power-integrated circuits, audio amplifiers and DC-DC converters. The array is capable of providing high-speed switching performance when operated in the rated voltage range and offers high-quality junction leakage characteristics and wide-ranging gate capacitances.

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