SI5906DU-T1-GE3

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SI5906DU-T1-GE3 is an N-channel Enhancement mode MOSFET array consisting of three N-channel MOSFETs. It is derived from the Trench Gate Field Effect Transistor (FET) architecture, which is a variation of the conventional MOSFET architecture. It uses source-side diffused resistors to achieve an excellent symmetric RDS(ON) as low as 75mOhms in the 2.5m process.

The SI5906DU-T1-GE3 array features a single gate terminal for the control of all three MOSFETs. By connecting the gate terminal to different voltage levels, the MOSFETs can be turned ON or OFF in response. With three MOSFETs in one package, it is possible to build logic level power switching circuits with few external components and minimal power dissipation.

The application field of the SI5906DU-T1-GE3 is quite broad and includes power supplies, backlighting modules, embedded applications, automotive electronics, digital home appliances, and other consumer electronics applications. It is especially suitable for low-voltage, high-efficiency applications, such as DC/DC converters, motor drives, and LED backlight power supplies.

The working principle of the SI5906DU-T1-GE3 is relatively simple and straightforward. When the gate terminal is connected to a low voltage level, the MOSFETs are turned OFF, which results in a closed circuit. When the gate terminal is connected to a high voltage level, the MOSFETs are turned ON, which results in an open circuit. This allows the SI5906DU-T1-GE3 to be used for controlling the flow of electricity in a variety of applications.

The SI5906DU-T1-GE3 MOSFET array is an effective solution for low-voltage, high-efficiency applications. Its features, such as its single gate terminal, low RDS(ON), and wide application range, make it attractive for a variety of scenarios.

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