Allicdata Part #: | SI5933DC-T1-GE3-ND |
Manufacturer Part#: |
SI5933DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 2.7A 1206-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.7A 1.1W Surf... |
DataSheet: | SI5933DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI5933 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 2.7A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5933DC-T1-GE3 is an array of dual N-channel MOSFETs with common source and drain on each side. The array is comprised of three independent N-channel MOSFETs, each one rated for continuous drain-source current of 30A, providing exceptional switching capabilities.
The SI5933DC-T1-GE3 is designed to provide superior temperature performance, with its low on-resistance temperature ranges (RDS(on)TH = < 10 mΩ @ 10V); it is also designed to provide low on-resistance drop (RDS(on)TV = < 0.12mΩ @ 10V) that ensure excellent efficiency when used in high-power applications. Its ESD rating of 2KV HBM offers improved safety and reliability.
The SI5933DC-T1-GE3 is suitable for use in wide variety of high power applications such as power supplies, UPS systems, motor control and industrial automation. Its high current carrying capability and efficiency make it an ideal choice for use in high voltage and high amperage circuits.
The SI5933DC-T1-GE3\'s input signals are applied to the gates of the respective MOSFETs in the array. An external voltage is then applied to the source pins, causing the drain current to flow from the drain pin. For P-channel MOSFETs, an external voltage of negative polarity is applied to the respective source pins. The primary function of the array is to provide current control with an applied voltage, regulating the output current from the drain pins.
The structure of the array allows for its implementation in a variety of applications. As each MOSFET in the array is separately controlled, it provides a voltage-controlled current source, allowing it to be used in a variety of high power applications. It can be used to drive LEDs, motors, lamps, relays, transistors and other high power components. It can also be used to regulate output current, providing current protection to any system by preventing excess current from being drawn.
The SI5933DC-T1-GE3 offers exceptional performance in a compact package. Its low on-resistance, high current carrying capability and high-temperature performance make it the perfect choice for a broad range of industrial, consumer and automotive applications. The array\'s low on-resistance temperature ranges and ESD protection make it particularly suitable for use in high power applications, providing excellent efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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