SI5935DC-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5935DC-T1-E3TR-ND |
Manufacturer Part#: |
SI5935DC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 3A 1206-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3A 1.1W Surfac... |
DataSheet: | SI5935DC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI5935 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 86 mOhm @ 3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5935DC-T1-E3 is a high-power, low-voltage, load-switching MOSFET array used for switching DC loads. This versatile MOSFET array is designed to manage high-current applications in automotive and industrial applications. With its wide range of switching voltages and low-current draw, it is a great choice for a wide range of applications.
The SI5935DC-T1-E3 is an integrated circuit that integrates two n-channel depletion-mode MOSFETs in a single package to provide a high-performance solution for switching DC loads. The MOSFETs have low on-state resistance and excellent threshold voltage regulation, making it well suited for automotive and industrial applications.
The SI5935DC-T1-E3 is designed to provide reliable, high-performance switching and protection for automotive and industrial applications. It features integrated protection features such as reverse polarity protection and over-temperature protection that helps protect the circuit from damages due to overheat and incorrect connections. For automotive applications, the SI5935DC-T1-E3 also has an integrated inrush limiter that allows for a controlled startup to minimize inrush current. The device also has an integrated circuit breaker that terminates the current when an overload is detected, providing additional protection for the circuit.
The SI5935DC-T1-E3 is available in a variety of form factors and voltage ratings, making it an ideal choice for a range of different applications. It can be used to switch low-voltage DC, such as 12V or 24V, or high-voltage DC, such as up to 400V. The device is available with either a single MOSFET package or as an array with multiple MOSFETs. The array version provides increased flexibility and more switching combinations.
The SI5935DC-T1-E3 is designed for high-current applications and is a great choice for applications involving DC motors, solenoids, and other high current loads. It offers excellent thermal protection and is designed to handle up to 20A continuously. It can also be used to switch AC loads, but with a maximum current of 8A.
The working principle behind the SI5935DC-T1-E3 is simple yet effective. When the gate voltage is below the threshold voltage, the MOSFET is in the off-state, blocking the current. When the gate voltage rises above the threshold voltage, the MOSFET is switched on and the current is allowed to flow. This process is repeated when the gate voltage rises or falls, allowing the MOSFET to switch fast and efficiently.
The SI5935DC-T1-E3 is an excellent choice for automotive, industrial, and other high-current applications. It is designed to provide reliable and efficient switching and protection, making it a great choice for a wide range of applications. The device is available in a variety of form factors and voltage ratings, allowing for a wide range of switching combinations.
The specific data is subject to PDF, and the above content is for reference
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