SI5905DC-T1-E3

Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Base Part Number:	SI5905
Supplier Device Package:	1206-8 ChipFET™
Package / Case:	8-SMD, Flat Lead
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.1W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	9nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	90 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3A
Drain to Source Voltage (Vdss):	8V
FET Feature:	Logic Level Gate
FET Type:	2 P-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5905DC-T1-E3 is a transistor array device specifically designed for use as protection circuits or level shifters in application fields that require high-frequency operation and voltage regulation. The SI5905DC-T1-E3 comprises three N-channel MOSFETs that are connected in a “Darlington” arrangement. This arrangement provides superior on-resistance and threshold voltage of the MOSFETs. As such, it is ideal for use as a protection circuit or level shifter. The MOSFETs in the SI5905DC-T1-E3 are manufactured using silicon-on-insulator (SOI) technology. This means that the transistors are isolated from each other and the substrate, allowing for more excellent on-resistance and higher frequency operation. In addition, the SOI MOSFETs are also able to achieve a lower on-resistance than traditional planar MOSFETs. The SI5905DC-T1-E3 is designed to handle high-frequency operation and voltage regulation. The device is capable of switching voltages up to 50V, allowing for a wide range of applications. It is provided in a space-saving SOT343 package, which makes it suitable for applications where space is at a premium. In addition, the device has a wide operating temperature range of -55°C to +85°C. The working principle of the SI5905DC-T1-E3 is simple. When a voltage is applied to the gate of an N-channel MOSFET, the channel becomes conductive, allowing current to flow from the source to the drain. This triggers a “Darlington” effect, in which the combined gates of all three MOSFETs act as one. As such, the device can be used for a variety of applications, such as level shifting, protection circuits, and high-frequency operation. In conclusion, the SI5905DC-T1-E3 is an ideal device for a wide range of applications that require high-frequency operation and voltage regulation. This versatile transistor array device features three N-channel MOSFETs connected in a “Darlington” arrangement, which provides superior on-resistance and threshold voltage of the MOSFETs. The device is provided in a space-saving SOT343 package, and has a wide operating temperature range of -55°C to +85°C.

 

 

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description