Allicdata Part #: | SI5915BDC-T1-E3-ND |
Manufacturer Part#: |
SI5915BDC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 8V 4A 1206-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 8V 4A 3.1W Surface... |
DataSheet: | SI5915BDC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI5915 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.1W |
Input Capacitance (Ciss) (Max) @ Vds: | 420pF @ 4V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 3.3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 8V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5915BDC-T1-E3 is a high-performance array of transistors made for electronics applications. It is an array of FETs (Field Effect Transistors), MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The array contains a total of five transistors in one physical package, each with its own gate, source and drain. This makes it suitable for use in multiple applications in which a large number of transistors are required to control the flow of current and voltage.The SI5915BDC-T1-E3 is particularly well-suited for use in automotive electronics, industrial automation, communications systems, and electronic systems used in aerospace engineering. It is a robust device that is capable of operating in harsh environmental conditions. In automotive applications, it can be used to switch on and off particular components in the onboard systems. For example, it can be used to switch on an audio system or an electric ignition in a vehicle.In industrial automation applications, the SI5915BDC-T1-E3 can be used to control various processes. This could include remotely controlling a machine, or changing the voltage or current of a particular component. It is also used in communications and avionics systems to effectively switch specific components in and out of the system.The working principle behind the SI5915BDC-T1-E3 is based on the principle of metallic oxide semiconductor field effect transistors, or MOSFETs, which are used for controlling current and voltage signals. As current passes through the gate of the transistor, it modulates the flow of current through the source and drains. This modulation of the current is used to activate specific circuits within the device, thus allowing the user to control particular operations.In practice, the SI5915BDC-T1-E3 offers several advantages over traditional transistors due to its integrated array design. For instance, it is able to operate at high speeds, making it ideal for a variety of applications. It is also immune to noise and interference, allowing for more reliable operation. Finally, the transistors are spaced out, making it easier to cut off certain components, or reduce their current or voltage levels.The SI5915BDC-T1-E3 is a versatile and reliable array of transistors that can be used in a variety of electronics applications. Its integrated array design allows for a great deal of flexibility and control for its users, making it an ideal choice for automated processes, communications systems, and aerospace engineering. As such, it is an invaluable tool for those who work with electronics.
The specific data is subject to PDF, and the above content is for reference
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SI5933CDC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 3.7A 120... |
SI5935CDC-T1-E3 | Vishay Silic... | 0.16 $ | 1000 | MOSFET 2P-CH 20V 4A 1206-... |
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SI5905BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 8V 4A 1206-8... |
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SI5915BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 4A 1206-8... |
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