SI5947DU-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5947DU-T1-E3TR-ND |
Manufacturer Part#: |
SI5947DU-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 6A 8PWRPAK |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 6A 10.4W Surfa... |
DataSheet: | SI5947DU-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | SI5947 |
Supplier Device Package: | PowerPAK® ChipFet Dual |
Package / Case: | PowerPAK® ChipFET™ Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 10.4W |
Input Capacitance (Ciss) (Max) @ Vds: | 480pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 3.6A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5947DU-T1-E3 is a transistor array designed to amplify or switch a signal. It belongs to the class of Field Effect Transistors (FETs), a type of transistor that uses majority carriers or electric fields to control the current flows in a circuit. It is commonly used as a replacement of a single FET or multiple FETs in a circuit.The SI5947DU-T1-E3 is an array of three N-channel enhancement-mode FETs. It is specifically designed for high current switching applications. The array has a low on-resistance of 0.80Ω, a low threshold voltage of 0.8V, and can handle up to 18mA of continuous current. The array is housed in a 16-pin DIP package and is compatible with standard breadboard circuitry.Most FETs are unipolar devices, meaning that both the source and the drain can be controlled by the same gate. The SI5947DU-T1-E3, however, takes advantage of the two different fields within the same package: a p-type field to control the drain and an n-type field to control the source. This allows for improved control of the current flow and switching speed, which is especially useful in high current applications.The SI5947DU-T1-E3 is designed for a wide range of uses. Its low on-resistance, low threshold voltage, and high-current capabilities make it suitable for use as a driver in motor control circuits, as a switch in power supplies, and in automotive and industrial applications. Its use as a driver in motor control circuits makes it particularly advantageous because of its low on-resistance and high current handling capabilities.The SI5947DU-T1-E3 works by utilizing a pair of FETs in parallel to control the gate voltage. When a current passes through the series resistor, one FET switches on and the other turns off. This creates a voltage between the gate and the source, which is used to control the current flowing from the source to the drain. As the current increases, the voltage between the gate and source increases, which in turn causes the current to increase further. This results in the FET switching on and off rapidly, enabling high frequency operation.In addition to its use in motor control and power supply systems, the SI5947DU-T1-E3 can also be used to switch low-voltage signals. It is commonly used in audio equipment, such as amplifiers and speakers, as well as in radios and other high-frequency applications. Overall, the SI5947DU-T1-E3 is a robust transistor array designed for a variety of applications requiring high-current switching and control. Its application range and wide range of features make it particularly attractive for use in audio, automotive, and industrial environments.
The specific data is subject to PDF, and the above content is for reference
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