SI5935CDC-T1-E3

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The SI5935CDC-T1-E3 is a dual N-channel MOSFET array, with two independent N-channel MOSFETs arranged in a single package. It is one of the most widely used MOSFET chips due to its low RDSon, high current drive capability, and high voltage rating. The SI5935CDC-T1-E3 is well-suited for applications such as low-side power switches, DC-DC converters, voltage regulators, and class-D amplifiers.

The SI5935CDC-T1-E3 has two independent N-channel MOSFETs in a single package. Each of the two MOSFETs operates independently, enabling the chip to operate in two different voltage passes. Each MOSFET has an independent Gate Drive circuit, allowing flexible control and protection of the loads.

The design of the chip includes a bi-directional diode, which allows the two MOSFETs to protect each other from short circuit conditions, making the SI5935CDC-T1-E3 well-suited for high current applications. The chip also features improved thermal management, making it suitable for power-sensitive applications. Additionally, the integrated ESD protection presents an advantage for applications where ESD is likely to be encountered.

The complete electrical characteristics of the SI5935CDC-T1-E3 are available in the manufacturer’s data sheet. The chip features high current drive capability, low RDSon, and wide operating temperature range, which makes it suitable for many applications. Additionally, the integrated charge pump circuitry allows fast switching and low power consumption.

The SI5935CDC-T1-E3 MOSFET array’s working principle is simple: when the gate is driven, the two source and drain terminals of the MOSFET get connected, allowing current to flow through the device. The addition of the diode allows both MOSFETs to be connected in parallel and serve as a bidirectional switch with improved load protection.

The SI5935CDC-T1-E3 is a highly versatile MOSFET array and can be used for a wide range of applications. It is well-suited for DC-DC converters, motor control and power switches, high-side and low-side switches, and power supply applications. It can also be used for voltage regulation and class-D audio applications.

In conclusion, the SI5935CDC-T1-E3 is an ideal solution for a wide range of applications. Its dual N-channel MOSFET array provides high current drive capability and low RDSon, its diode provides improved protection from short circuit conditions, and its integrated ESD protection makes it suitable for applications where ESD is likely to be encountered. Its charge pump circuitry allows fast switching and low power consumption, making it suitable for power-sensitive applications.

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