SI5933DC-T1-E3

Vgs(th) (Max) @ Id:	1V @ 250µA
Base Part Number:	SI5933
Supplier Device Package:	1206-8 ChipFET™
Package / Case:	8-SMD, Flat Lead
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	1.1W
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	7.7nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	110 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.7A
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	2 P-Channel (Dual)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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• Introduction

The SI5933DC-T1-E3 is a dual-channel fully-differential array of p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). It is designed to be used in non-isolated multiple supply applications, specifically those involving driving loads directly from the output or allowing separate supply rails for each channel. It is intended for a wide range of applications, including power supplies, motor controllers, digital-power systems and portable devices.

• Features

The SI5933DC-T1-E3 features a typical on-resistance of 4.2KΩ in a wide operating range. It has low gate charge and gate-to-drain charge which helps with efficiency in half bridge applications. The array also features a high current gain with a wider dynamic range, making it suitable for high-power load applications.

• Application fields

The SI5933DC-T1-E3 is ideal for applications such as power-supply systems, motor controls, digital-power systems, and portable devices. The array can be used in a variety of non-isolated, multiple-supply applications. It is designed to drive a range of loads directly from the output, or to create separate supply rails for each channel. This makes it very useful for applications such as motor control, power converters, and high-power load applications.

• Working principle

The SI5933DC-T1-E3 is a dual-channel, fully-differential array of p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). The array functions by allowing electric current to flow between its source and drain terminals when the gate voltage is in the right range. When the voltage at the gate is removed, the electric current flow ceases, allowing the transistor to act as an electronic switch.The SI5933DC-T1-E3 is designed to be used in non-isolated, multiple-supply applications. This allows the array to provide two separate supply rails for each channel, while providing a high current gain and a wide dynamic range. This enables it to handle a range of different types of loads, from high-power loads to low-power ones.

• Conclusion

The SI5933DC-T1-E3 is a dual-channel, fully-differential array of p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). It is designed to be used in non-isolated, multiple-supply applications and is ideal for a wide range of uses. It has a low on-resistance, low gate charge, high current gain and wide dynamic range, making it suitable for high-power load applications. The array can be used to drive a range of loads directly from the output, or to create separate supply rails for each channel.

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