Allicdata Part #: | SI5913DC-T1-GE3TR-ND |
Manufacturer Part#: |
SI5913DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 4A 1206-8 |
More Detail: | P-Channel 20V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface... |
DataSheet: | SI5913DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta), 3.1W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 84 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Last Time Buy |
Packaging: | Tape & Reel (TR) |
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Integrated circuits are complex components that are crucial for controlling electrical signals in many electronic systems. The SI5913DC-T1-GE3 is a metal oxide semiconductor field effect transistor (MOSFET) that offers high levels of precision and accuracy, enabling it to be used in a wide range of applications. In this article, we will discuss the field of application and working principle of the SI5913DC-T1-GE3.
The SI5913DC-T1-GE3 is an enhancement-mode MOSFET, meaning that it can be used to amplify both analog and digital signals. This makes it a highly versatile component, allowing it to be used in a range of applications requiring precise and accurate current or voltage control. This includes switching and amplifying digital signals in computers and other digital systems, as well as controlling and amplifying analog signals from power supplies, sensors, and radiofrequency (RF) components.
One of the most common uses for the SI5913DC-T1-GE3 is for switching relays. Relays are electro-mechanical components that are used to control electrical signals. In order to switch a relay, a current must be directed to its coil, and the SI5913DC-T1-GE3 can be used to control this current. The SI5913DC-T1-GE3 can control the current with a high degree of accuracy, thus allowing the relay to be switched on or off with a precise and dependable response.
The SI5913DC-T1-GE3 can also be used to adjust the operating frequency of oscillators, allowing designers to fine tune the frequency of their circuits. This makes the SI5913DC-T1-GE3 useful for RF applications, such as radio receivers, where precise control over the frequency of the oscillator is required. Other applications include motor control, power inverters, and solenoid valves.
The SI5913DC-T1-GE3 working principle is based on manipulating the electric field in a semiconductor material. When a voltage is applied to its gate pin, the electric field alters the semiconductor\'s conductivity, allowing it to switch between an on state (high conductivity) and an off state (low conductivity). This gate voltage can be controlled precisely, allowing the SI5913DC-T1-GE3 to accurately control the current flow in connected circuits.
The SI5913DC-T1-GE3 is ideal for applications that require precise and accurate control of signals. It is well suited to switching relays and controlling the operational frequency of oscillators, as well as other applications such as motor control, power inverters, and solenoid valves. Thanks to its reliable operation and consistent performance, the SI5913DC-T1-GE3 has become a popular choice among designers.
The specific data is subject to PDF, and the above content is for reference
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